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Lattice deformation and magnetic properties in epitaxial thin films of Sr1-xBaxRuO3

Published online by Cambridge University Press:  10 February 2011

Noburu Fukushima
Affiliation:
Materials and Devices Research Labs., Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
Kenya Sano
Affiliation:
Materials and Devices Research Labs., Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
Tatsuo Schimizu
Affiliation:
Materials and Devices Research Labs., Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
Kazuhide Abe
Affiliation:
Materials and Devices Research Labs., Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
Shuichi Komatsu
Affiliation:
Materials and Devices Research Labs., Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
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Abstract

The crystal structure and magnetic properties in epitaxially grown Sr1-xBaxRuO3 on SrTiO3 substrates were determined. Epitaxial Sr1-xBaxRuO3 exhibits a simple perovskite structure in the whole region of Ba/Sr ratio, in contrast to a complex hexagonal layered perovskite in the case of Ba-rich bulk Sr1-xBaxRuO3 which has plane-sharing oxygen octahedra. Tetragonal deformation was enhanced from the pseudo cubic structure of SrRuO3 to a highly distorted tetragonal lattice in BaRu03. Electronic properties such as conductivity and magnetization were examined and compared to the results of band calculation in which a tetragonal distortion was taken into account. A metal-insulator transition was not observed in this system either in the experiment or in the simulation, and metallic conductivity was maintained in the whole region of Ba content. The ferromagnetic ordering which occurs at 160K in pseudo-cubic bulk SrRuO3 was suppressed in Sr1-xBaxRuO3 films with increasing tetragonal deformation and Curie temperature decreased to 50K in BaRuO3.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Torrance, J. B., Lacorre, P., Nazzal, A. I., Ansaldo, E. J. and Niedermayer, Ch., Phys. Rev. B45, 8209 (1992)Google Scholar
2. Tokura, Y., J. Phys. Chem. Solids, 53, 1619(1992)Google Scholar
3. Inoue, I. H., Hase, I., Aiura, Y., Fujimori, A., Haruyama, Y., Maruyama, T. and Nishihara, Y., Phys. Rev. Lett., 74, 2539 (1995)Google Scholar
4. Yoshizawa, H.,, Kajimoto, R., Kawano, H., Tomioka, Y. and Tokura, Y., Phys. Rev. B55, 2729 (1997)Google Scholar
5. Canfield, P. C., Thompson, J. D., Cheong, S-W. and Rupp, L. W., Phys. Rev. B47, 12357 (1993)Google Scholar
6. Hwang, H. Y., Palstra, T. T. M., Cheong, S-W. and Batlogg, B., Phys. Rev. B52, 15046 (1995)Google Scholar
7. Khazeni, K., Jia, Y. X., Liu, Li, Crespi, Vincent H., Cohen, Marvin L. and Zettl, A., Phys. Rev. Lett., 76, 295 (1996)Google Scholar
8. Izuha, M., Abe, K. and Fukushima, N., Jpn. J. Appl. Phys., 36, 5866 (1997)Google Scholar
9. Abe, K. and Komatsu, S., Jpn. J. Appl. Phys., parti, 33, 5297 (1994)Google Scholar
10. Donahue, P. C., Katz, L. and Ward, R., Inorgic Chem., 4, 306 (1965);Google Scholar
Donahue, P. C., Katz, L. and Ward, R., Inorgic Chem., 4, 306 (1965);Google Scholar
Donahue, P. C., Katz, L. and Ward, R., Inorgic Chem., 5, 335 (1966)Google Scholar
11. Callaghan, A., Moeller, C. and Ward, R., Inorganic Chem., 5, 1572 (1996)Google Scholar
12. Srikant, V., Tarsa, E. J., Clarke, D. R., and Speck, J. S., J. Appl. Phys., 77, 1517 (1995)Google Scholar
13. Wu, N. J., Lin, H., Xie, K., Li, X.Y. and Ignatiev, A., Physica C232., 151 (1994)Google Scholar
14. Yano, Y., Iijima, K., Daitoh, Y., Terashima, T., Bando, Y., Watanabe, Y., Kasatani, H. and Terasaki, H., J. Appl. Phys., 76, 7833 (1994)Google Scholar
15. Yoneda, Y., Kasatani, H., Terauchi, H., Yano, Y., Terashima, T. and Bando, Y., J. Phys. Soc. Jpn., 62, 1840 (1994)Google Scholar
16. Abe, K. and Komatsu, S., J. Appl. Phys., 77, 6461 (1995)Google Scholar
17. Wills, L. A. and Amano, J., Material Research Society Proceedings: Ferroelectric Thin Films (1994)Google Scholar
18. Maeno, Y., Hashimoto, H., Yoshida, K., Nishizaki, S., Fujita, T., Bednorz, J. G. and Lichtenberg, F., Nature 372, 532 (1994)Google Scholar
19. Lu, Yu, Li, X. W., Gong, G. Q., Xiao, G., Gupta, A., Lecoeur, P., Sun, J. Z., Wang, Y.Y., Sun, J. Z., Wang, Y. Y. and Dravid, V. P., Phys. Rev. B54, R8357 (1996)Google Scholar
20. Allen, P. B., Berger, H., Chauvet, O., Forro, L., Jarlborg, T., Junod, A., Revaz, B. and Santi, G., Phys. Rev. B53, 4393 (1996)Google Scholar
21. Terauchi, H., Watanabe, Y., Kasatani, H., Kamigaki, K., Yano, Y., Terashima, T. and Bando, Y., J. Phys. Soc. Jpn., 61, 2194 (1992)Google Scholar