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Lateral Sputtering by Gas Cluster Ion Beams and its Applications to Atomic Level Surface Modification

Published online by Cambridge University Press:  21 February 2011

Isao Yamada  and
Jiro Matsuo
Isao Yamada
Affiliation:
Ion Beam Engineering Experimental Laboratory Kyoto University, Sakyo, Kyoto 606, Japan, [email protected]
Jiro Matsuo
Affiliation:
Ion Beam Engineering Experimental Laboratory Kyoto University, Sakyo, Kyoto 606, Japan, [email protected]
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Abstract

Gas cluster ion beam equipment (max. voltage 30kV) for sputtering has been developed. Cluster ion beams from gaseous materials such as Ar, O2, N2 and compound materials such as SF6, N2O, CO2 can be generated by expanding them through a Laval nozzle into a high-vacuum region. With this equipment sputtering process fundamentals have been studied. One of the unique characteristics of gas cluster ion bombardment is lateral sputtering. This is shown experimentally by measuring the angular distribution of sputtered atoms and is predicted by molecular dynamics simulation. Dependencies of sputtering yield (10-1000 times higher than for the monomer ion case) on cluster ion size and on ion beam energy for different substrate surfaces have been obtained. Examples of surface smoothing (typically less than 1 nm average roughness) on metals, semiconductors and insulators and of surface cleaning are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 149
Copyright
Copyright © Materials Research Society 1996

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References

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