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Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

Published online by Cambridge University Press:  22 February 2011

H. Yamamoto ,
H. Ishiwara ,
S. Furukawa ,
M. Tamura  and
T. Tokuyama
H. Yamamoto
Affiliation:
Department of Applied Electronics, Tokyo Institute of Technology, Yokohama 227, Japan
H. Ishiwara
Affiliation:
Department of Applied Electronics, Tokyo Institute of Technology, Yokohama 227, Japan
S. Furukawa
Affiliation:
Department of Applied Electronics, Tokyo Institute of Technology, Yokohama 227, Japan
M. Tamura
Affiliation:
Central Research Lab., Hitachi Ltd., Tokyo 185, Japan
T. Tokuyama
Affiliation:
Central Research Lab., Hitachi Ltd., Tokyo 185, Japan
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Abstract

Lateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 511
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Lam, H.M., Zobczak, Z.P., Pinizzotto, R.F., and Tasch, A.F. Jr., IEEE Trans. Electron Devices ED-29 389 (1982).Google Scholar
2. Shibata, K., Inoue, T., Takigawa, T., and Yoshii, S., Appl. Phys. Lett. 39 645 (1982).CrossRefGoogle Scholar
3. Fan, J.C.C, Tsaur, B-Y., Chapman, R.L., and Geis, M.W., Appl. Phys. Lett. 41, 186 (1982).CrossRefGoogle Scholar
4. Ohmura, Y., Matsushita, Y., and Kashiwagi, M., Jpn. J. Appl. Phys. 21, L152 (1982).Google Scholar
5. Kunii, Y., Tabe, M., and Kajiyama, K., J. Appl. Phys. 54, 2647 (1983).CrossRefGoogle Scholar
6. Ishiwara, H., Yamamoto, H., Furukawa, S., Tamura, M., and Tokuyama, T., Appl. Phys. Lett. 43, (1983), in press.Google Scholar
7. Saitoh, S., Sugii, T., Ishiwara, H., and Furukawa, S., Jpn. J. Appl. Phys. 20, L130 (1981).Google Scholar
8. Roth, J.A., Kokorowski, S.A., Olson, G.L., and Hess, L.D., Proc. Sympo. Laser and Electron-Beam Interactions with Solids, Boston, 1981, Appleton, B.R., Celler, G.K., eds. (North-Holland, New york, 1982) pp.169.Google Scholar
9. Tamura, M., Tokuyama, T., Yamamoto, H., Ishiwara, H., and Furukawa, S., to be published in Proc. US-Japan Seminar on Solid Phase Epitaxy and Interface Kinetics, Oiso, 1983.Google Scholar
10. Csepregi, L., Kennedy, E.F., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 49, 3906 (1978).Google Scholar
11. Kunii, Y. and Kajiyama, K., to be published in Proc. US- Japan Seminar on Solid Phase Epitaxy and Interface Kinetics, Oiso, 1983.Google Scholar