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Lateral Nonuniformity And Mesoscale Effects in Giant Area Electronics

Published online by Cambridge University Press:  01 February 2011

V. G. Karpov ,
Diana Shvydka  and
Yann Roussillon
V. G. Karpov
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606, U.S.A.
Diana Shvydka
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606, U.S.A.
Yann Roussillon
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606, U.S.A.
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Abstract

The recently developed physics of thin-film photovoltaics is suggested to be representative of other giant area electronics. We show that (i) giant-area devices are intrinsically nonuniform in the lateral directions, (ii) the nonuniformity spans length scales from millimeters to meters depending on external drivers such as light intensity and bias, and (iii) it significantly impacts the device performance. We derive a fundamental length scale that discriminates between the cases of small and large-area devices, and beyond which a new physics emerges. In addition, we present a practical method of mitigating the nonuniformity effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 870: Symposium H – Giant-Area Electronics on Nonconventional Substrates , 2005 , H2.2
Copyright
Copyright © Materials Research Society 2005

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References

1 Sze, S.M., Physics of Semiconductor Devices (Willey, New York, 1981).Google Scholar
2 Karpov, V. G., Compaan, A. D., and Shvydka, Diana, “Random diode arrays and mesoscale physics of large-area semiconductor devices”, Phys. Rev B 69, 045325, (2004).Google Scholar
3 Roussillon, Y., Karpov, V. G., Shvydka, D., Drayton, J., and Compaan, A. D., Back contact and reach-through diode effects in thin-film photovoltaics, J. Appl. Phys. 96, 7283 (2004).Google Scholar
4 Shvydka, Diana and Karpov, V. G., “Nonuniform Power Generation in Random Diode Arrays”, Phys. Rev. B 71, (2005), to appear.Google Scholar
5 Roussillon, Y., Giolando, D., Shvydka, Diana, Compaan, A. D., and Karpov, V. G., Blocking thin film nonuniformities: photovoltaic self-healing, Appl. Phys. Lett. 84, 616 (2004).Google Scholar
6 Karpov, V. G., Shvydka, Diana, Roussillon, Y., and Compaan, A. D., “The mesoscale Physics of Large Area Photovoltaics” Proceedings of 3d World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 2P–D3, 2003.Google Scholar
7 Spradlin, J., Dogan, S., Mikkelson, M., Huang, D., He, L., Johnstone, D., Morkoc, H., Molnar, R. J., “Improvement of n-GaN Schottky diode rectifying characteristics using KOH Etching” Appl. Phys. Lett., 82, 3556 (2003).Google Scholar