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Lateral InxGa1−x, P Heterostructures Obtained by Single Step Growth on Pre-Patterned Substrate by Chemical Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

M.P.P. de Castro ,
J. Betitni ,
C.A. Ribeiro ,
M.M. Carvalho  and
N.C. Frateschi
M.P.P. de Castro
Affiliation:
Departamento de Fisica Aplicada, LPD- Universidade Estadual de Campinas- São Paulo, Brasil
J. Betitni
Affiliation:
Departamento de Fisica Aplicada, LPD- Universidade Estadual de Campinas- São Paulo, Brasil
C.A. Ribeiro
Affiliation:
Departamento de Fisica Aplicada, LPD- Universidade Estadual de Campinas- São Paulo, Brasil
M.M. Carvalho
Affiliation:
Departamento de Fisica Aplicada, LPD- Universidade Estadual de Campinas- São Paulo, Brasil
N.C. Frateschi
Affiliation:
Departamento de Fisica Aplicada, LPD- Universidade Estadual de Campinas- São Paulo, Brasil
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Abstract

We present an investigation on the spatial compositional variation in InGaP layers grown by chemical beam epitaxy (CBE) on pre-patterned substrates. Neighboring regions with 190 meV bandgap discontinuity are observed with the growth at 500°C. The development of laser structures on V-grooves that incorporate these lateral heterostructures is achieved by controlling the growth temperature during growth

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 79
Copyright
Copyright © Materials Research Society 1999

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References

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