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Lateral Growth of InN on GaN/Sapphire

Published online by Cambridge University Press:  21 March 2011

Fuh-Hsiang Yang ,
Jih-Hsien Hwang ,
Kuei-Hsien Chen  and
Ying-Jay Yang
Fuh-Hsiang Yang
Affiliation:
Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan
Jih-Hsien Hwang
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
Kuei-Hsien Chen
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
Ying-Jay Yang
Affiliation:
Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan
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Abstract

The lateral growth of high quality InN on the stripe-pattern GaN/sapphire substrate with an OMVPE system was studied. The surface morphology and structural properties were investigated. Epitaxial films were achieved due to the greatly reduced strain by lateral growth. Two kinds of growth mode were observed due to different growth conditions of V/III ratios. X-ray rocking curve with FWHM of 700 arcsec shows the good quality of the film and E2 mode of Raman spectrum with FWHM of 3.5 cm-1 is among the best results ever reported in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.54.1
Copyright
Copyright © Materials Research Society 2002

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