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Lateral growth of AlxGa1–xN and GaN on SiC substrates patterned by photo-electrochemical etching

Published online by Cambridge University Press:  11 February 2011

U. Rossów ,
N. Riedel ,
F. Hitzel ,
T. Riedl  and
A. Hangleiter
U. Rossów
Affiliation:
TU Braunschweig, Inst. f. Techn. Physik, D-38106 Braunschweig, Germany
N. Riedel
Affiliation:
TU Braunschweig, Inst. f. Techn. Physik, D-38106 Braunschweig, Germany
F. Hitzel
Affiliation:
TU Braunschweig, Inst. f. Techn. Physik, D-38106 Braunschweig, Germany
T. Riedl
Affiliation:
TU Braunschweig, Inst. f. Techn. Physik, D-38106 Braunschweig, Germany
A. Hangleiter
Affiliation:
TU Braunschweig, Inst. f. Techn. Physik, D-38106 Braunschweig, Germany
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Abstract

The large defect densities in heteroepitaxially grown group-III-nitride layers on sapphire or SiC cannot be tolerated in applications such as lasers. We report here on a defect reduction by overgrowth of patterned n-6H-SiC(0001)surfaces.

First, we formed mesa structures in the windows of metal masks and then after removal of the masks layers of AlxGa1–xN and GaN were grown by low-pressure MOVPE under conditions of high lateral growth rates. We demonstrate that layers and layered structures can be grown with smooth surfaces and reduced defect densities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L1.9
Copyright
Copyright © Materials Research Society 2003

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References

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