Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T07:27:21.032Z Has data issue: false hasContentIssue false
  • English
  • Français

Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates

Published online by Cambridge University Press:  11 February 2011

Ganesan Suryanarayanan ,
Anish A. Khandekar ,
Brian E. Hawkins ,
Thomas F. Kuech  and
Susan E. Babcock
Ganesan Suryanarayanan
Affiliation:
Materials Science Program
Anish A. Khandekar
Affiliation:
Department of Chemical Engineering
Brian E. Hawkins
Affiliation:
Department of Chemical Engineering
Thomas F. Kuech
Affiliation:
Materials Science Program Department of Chemical Engineering
Susan E. Babcock
Affiliation:
Materials Science Program Department of Materials Science and Engineering, University of Wisconsin - Madison, Madison, WI 53706.
Get access

Abstract

The microstructure of epitaxial InAs thin films grown by MOCVD on mask-patterned “LEO” (lateral epitaxial overgrowth) GaAs and on unpatterned GaAs substrates was studied using double-crystal x-ray diffraction, scanning electron microscopy and cross-sectional transmission electron microscopy. This paper describes the improvement in crystal quality (factor of 20 reduction in x-ray rocking curve width), the order of magnitude reduction in dislocation density, and the rearrangement of the remaining extended defects that were observed in the LEO material when compared to the film grown on the unpatterned wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M1.4
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kim, S.-M. et al, J. Korean Phys. Soc. 40 (1), 119 (2002).Google Scholar
2. Wagner, G., Cryst. Res. Tech. 33 (5), 681 (1998), and references therein.Google Scholar
3. Yi, S.S., Hansen, D.M., Inoki, C.K., Harris, D.L., Kuan, T.S., and Kuech, T.F., Appl. Phys. Lett. 77 (6), 842 (2000).Google Scholar
4. Zheleva, T.S., Nam, O.-H., Bremser, M.D., and Davis, R.F., Appl. Phys. Lett. 71, 2472 (1997).Google Scholar
5. Marchand, H., Ibbetson, J.P., Fini, P., Kozodoy, P., Keller, S., Speck, J.S., DenBaars, S.P., Mishra, U.K., J. Cryst. Growth 209, 581 (2000), and references therein.Google Scholar
6. Dunn, K.A., Babcock, S.E., Stone, D.S., Matyi, R.J., Zhang, L., and Kuech, T.F., MRS Int. J. Nitride Semicond. Res. 5S1, W2.11 (2000).Google Scholar
7. Khandekar, A.A., Suryanarayanan, G., Babcock, S.E. and Kuech, T.F (as yet unpublished).Google Scholar