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Laser-Thermal Impurity Pumping of Shallow Donors in Ultrapure Germanium

Published online by Cambridge University Press:  25 February 2011

T. Theiler ,
F. Keilmann  and
E. E. Haller
T. Theiler
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 7000 Stuttgart 80, FRG
F. Keilmann
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 7000 Stuttgart 80, FRG
E. E. Haller
Affiliation:
University of California at Berkeley and Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
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Abstract

Extremely narrow far-infrared lines [1] of OH-donors in ultrapure germanium are used to probe the fundamental dynamic processes of impurities. We examine the 1s-2p transition as a function of laser intensity, using photothermal ionization spectroscopy (PTIS) modified by Zeeman tuning with frequency-fixed lasers. We observe a change of the resonance line shape in the intensity region near 10-4 W/cm2. This effect can be quantitatively understood in a rate equation model which shows that at the critical intensity the ground state becomes depleted and the dependence of the recombination on the degree of ionization becomes important. Therefore the critical intensity depends also on compensation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 133
Copyright
Copyright © Materials Research Society 1990

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