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Laser-Induced Fluorescence of Silicon and Silicon Monoxide in a Glow Discharge

Published online by Cambridge University Press:  21 February 2011

Anthony J. Hynes
Anthony J. Hynes*
Affiliation:
Molecular Sciences Branch, Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, GA 30332
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Abstract

Si atoms and SiO radicals have been monitored in DC ulow discharges via laser-induced fluorescence on the Si 4s 3P0-3P2−3P and SiO A1 π-x1Σ+ (0−0), (1−0) and (1−1) transitions. Production of Si 4s 3P0 in the 193 and 251 nm multiphoton dissociation of silanes has been observed and the implications for Si atom diagnostics discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 49
Copyright
Copyright © Materials Research Society 1990

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