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Laser-Induced Crystallization of Silicon on Bulk Amorphous Substrates: An Overview

Published online by Cambridge University Press:  15 February 2011

D. K. Biegelsen ,
N. M. Johnson ,
W. G. Hawkins ,
L. E. Fennell  and
M. D. Moyer
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
W. G. Hawkins
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
L. E. Fennell
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
M. D. Moyer
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
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Abstract

In this paper we review the current understanding of laser-induced silicon thin film crystal growth on bulk amorphous substrates. We propose a model for oriented nucleation and show that the silicon reflectivity jump on melting coupled with radiant heating lead naturally to this autonucleation mechanism. We then survey various techniques for control of lateral epitaxial growth and conclude with the results of some recent electrical device characterization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 537
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Permanent address: Xerox, Webster Research Center, Webster, NY 14580

References

REFERENCES

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