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Laser-Assisted Liquid-Phase Etching of Copper Conductors and its Application to Advanced Integrated Circuit Interconnect

Published online by Cambridge University Press:  26 February 2011

Robert F. Miracky  and
Kantesh Doss
Robert F. Miracky
Affiliation:
Microelectronics and Computer Technology Corporation (MCC) 12100 Technology Blvd., Austin, TX 78727
Kantesh Doss
Affiliation:
Microelectronics and Computer Technology Corporation (MCC) 12100 Technology Blvd., Austin, TX 78727
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Abstract

We have demonstrated a method f or the selective-area, laser-assisted liquid-phase etching of 6-μm thick copper conductors, by focusing the 488-μm line of an argon ion laser onto the surface of samples immersed in a dilute solution containing sulfuric acid and hydrogen peroxide. Average etch rates of up to 5.0 μm/s have been achieved, in the process of completely severing 14-μm wide copper lines, with little attendant damage to the underlying layer of polyimide. Two etchant formulations were identified which exhibited large etch rates at elevated temperatures and low enough background etch rates (approximately 1 μm/hr at 0 °C) to be useful in practical applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 435
Copyright
Copyright © Materials Research Society 1998

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References

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