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Laser Wavelength Dependent Properties of BN Thin Films Deposited by Laser Ablation

Published online by Cambridge University Press:  15 February 2011

Y. Suda ,
T. Nakazono ,
K. Ebihara  and
K. Baba
Y. Suda
Affiliation:
Department of Electrical Engineering, Sasebo National College of Technology, 1-1 Okishin-machi, Sasebo, Nagasaki 857-11, Japan
T. Nakazono
Affiliation:
Department of Electrical Engineering, Sasebo National College of Technology, 1-1 Okishin-machi, Sasebo, Nagasaki 857-11, Japan
K. Ebihara
Affiliation:
Department of Electrical Engineering and Computer Science, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860, Japan
K. Baba
Affiliation:
Technology Center of Nagasaki, 2-1303-8 Ikeda, Omura, Nagasaki 856, Japan
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Abstract

Boron Nitride (BN) thin films are deposited on heated (650 °C ) silicon (100) substrates using Nd:YAG (532 nm) and KrF excimer (248 nm) laser ablation. The laser beam is focused on the hBN targets. The films are grown using a laser repetition rate of 10 Hz atenergy density 3.8 J/cm2. Argon gas is mixed with the reactant nitrogen gas and the total gas pressure in the chamber during deposition is 20 Pa. Auger Electron Spectroscopy shows that the N/B composition ratio depends on the mixture ratio of nitrogen and the relativeemission intensity of B + (345.1 nm). The surface morphology of the films prepared by the 532 nm laser is rough with large particulates, whereas much smoother surfaces with fewer and smaller particulates are obtained with the 248 nm laser. Fourier Transform IR measurement shows that the cBN phase in the films is enhanced by applying the negative RF self-bias voltage ( ˜ 200 V) on the substrate electrode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 397
Copyright
Copyright © Materials Research Society 1996

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