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Laser Studies of the SiH Radical/Surface Interaction During Deposition of a thin Film

Published online by Cambridge University Press:  25 February 2011

Pauline Ho ,
Richard J. Buss  and
William G. Breiland
Pauline Ho
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
Richard J. Buss
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
William G. Breiland
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
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Abstract

This paper presents a new method for studying the interaction of radicals with the surface of a depositing film using a combination of laser spectroscopy and molecular beam techniques. The reactivity of SiH molecules with the surface of a depositing a-Si:H film is measured to be at least 0.95, with no strong dependence on rotational state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 233
Copyright
Copyright © Materials Research Society 1989

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References

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