Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T08:12:13.409Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Stimulated Growth of Epitaxial Gaas

Published online by Cambridge University Press:  15 February 2011

Walter Roth ,
Herbert Kräutle ,
Annemarie Krings  and
Heinz Beneking
Walter Roth
Affiliation:
Institute of Semiconductor Electronics, Sommerfeldstraße, D-5100 Aachen, FRG
Herbert Kräutle
Affiliation:
Institute of Semiconductor Electronics, Sommerfeldstraße, D-5100 Aachen, FRG
Annemarie Krings
Affiliation:
Institute of Semiconductor Electronics, Sommerfeldstraße, D-5100 Aachen, FRG
Heinz Beneking
Affiliation:
Institute of Semiconductor Electronics, Sommerfeldstraße, D-5100 Aachen, FRG
Get access

Abstract

Stimulated growth of single crystalline GaAs has been obtained by irradiation of (100) oriented GaAs substrates inside an MOCVD reactor with a pulsed Nd-YAG laser.

Process temperatures have been varied between 540°C and 360°C. In the non-irradiated areas, below 480°C substrate temperature the growth rate decreases rapidly, whereas in the irradiated part of the substrate epitaxial layers could be grown in the whole temperature range investigated. Below 450°C, the growth is reaction limited.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 193
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

LITERATURE

1. Osgood, R.M. jr. talk given at Microelectronics–Structures and Complexity, Lex Deux Alpes, 14.–20.03.1982.Google Scholar
2. Geis, M. W., Flanders, D. C. and Smith, H. I., Appl. Phys. Lett. 35, 71 (1979).CrossRefGoogle Scholar
3. Geis, M. W., Smith, H. I., Tsaur, B. Y., Fan, J. C. C., Silversmith, D. J. and Mountain, R. W., submitted to J. Electr. Chem. Soc.Google Scholar
4. Kräutle, H., Roehle, H., Escobosa, A. and Beneking, H., accepted for publication in J. Electron. Mat.Google Scholar
5. Beneking, H., Escobosa, A., Krautle, H., J. Electron. Mat., 10, 473–480 (1981).Google Scholar
6. Brunauer, Y., Copeland, L. E. and Kantro, D. L., The Solid Gas Interface, Marcel Dekker Inc., New York, 77 (1967).Google Scholar