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Laser Recrystallized Polysilicon on Sio2 For High Performance Resistors

Published online by Cambridge University Press:  15 February 2011

Rajiv R. Shah ,
D. Randy Hollingsworth  and
D. Lloyd Crosthwait
Rajiv R. Shah
Affiliation:
Texas Instruments Incorporated, Semiconductor Research and Development Laboratories, P.O. Box 225012, Dallas, Texas, 75265
D. Randy Hollingsworth
Affiliation:
Texas Instruments Incorporated, Semiconductor Research and Development Laboratories, P.O. Box 225012, Dallas, Texas, 75265
D. Lloyd Crosthwait
Affiliation:
Texas Instruments Incorporated, Semiconductor Research and Development Laboratories, P.O. Box 225012, Dallas, Texas, 75265
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Abstract

We demonstrate, for the first time, a technique for the fabrication of polysilicon resistors with excellent control and temperature characteristics: a standard deviation of 2.5 Ω/□ and temperature variation of -5.6% from 25° to 125°C for 1.96kΩ/□, 4.5 × 1014 cm˗2 boron implanted polysilicon resistors. The technique is based on fabricating resistors in laser recrystallized polysilicon on SiO2. Resistor performance is compared to that of similar resistors fabricated in standard LPCVD polysilicon and in single crystal silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 325
Copyright
Copyright © Materials Research Society 1982

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References

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