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Laser Photolytic Deposition of Thin Films*

Published online by Cambridge University Press:  15 February 2011

P. K. Boyer ,
C. A. Moore ,
R. Solanki ,
W. K. Ritchie ,
G. A. Roche  and
George J. Collins
P. K. Boyer
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
C. A. Moore
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
R. Solanki
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
W. K. Ritchie
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
G. A. Roche
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
George J. Collins
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
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Abstract

An excimer laser is used to photochemically deposit thin films of silicon dioxide, silicon nitride, aluminum oxide, and zinc oxide at low temperatures (100–350deg;C). Deposition rates in excess of 3000 Å/min and conformal coverage over vertical walled steps were demonstrated. The films exhibit low defect density and high breakdown voltage and have been characterized using IR spectrophotometry, AES, and C-V analysis. Device compatibility has been studied by using photodeposited films as interlayer dielectrics, diffusion masks, and passivation layers in production CMOS devices.

Additionally, we have deposited metallic films of Al, Mo, W, and Cr over large (>5 cm2) areas using UV photodissociation of trimethylaluminum and the refractory metal hexacarbonyls. Both shiny metallic films as well as black particulate films were obtained depending on the deposition geometry. The black films are shown to grow in columnar grains. The depositions were made at room temperature over pyrex and quartz plates as well as silicon wafers. We have examined the resistivity, adhesion, stress and step coverage of these films. The films exhibited resistivities at most ∼20 times that of the bulk materials and tensile stress no higher than 7 × 109 dynes/cm2

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 119
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Present Address: Johns Hopkins University, Department of Physics, Baltimore, MD 21218.

+

NCR Microelectronics, Fort Collins, CO 80526

**

Present address: Thermco Inc., Orange, CA 92668.

*

This work supported by the Office of Naval Research.

References

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