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Laser Patterning of II-VI Epitaxial Thin Films

Published online by Cambridge University Press:  25 February 2011

S.J.C. Irvine ,
H. Hill ,
J.E. Hails ,
G.W. Blackmore  and
J.B. Mullin
S.J.C. Irvine
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern Worcs. WR14 3PS UK
H. Hill
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern Worcs. WR14 3PS UK
J.E. Hails
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern Worcs. WR14 3PS UK
G.W. Blackmore
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern Worcs. WR14 3PS UK
J.B. Mullin
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern Worcs. WR14 3PS UK
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Abstract

The laser induced photo-MOVPE (photolytic-metal organic vapour phase epitaxy) technique has been used to grow epitaxial films onto CdTe or GaAs substrates (with a 257nm frequency doubled Argon ion laser). The growth temperature was chosen to be below the normal pyrolysis temperature so that decomposition of the metal-organics will only occur within the illuminated parts of the substrate. A measure of enhancement of growth rate by UV illumination is the photo-enhancement factor which has been determined for CdTe deposits onto Si(100) substrates using the precursors dimethyl cadmium (Me2Te) together with either diethyl telluride (Et2Te) or dimethyl ditelluride (Me2Te2). For patterned epitaxial layers at 300°C, Et2Te was preferable to Me2Te2 because Et2Te was more stable, yielding a higher photo-enhancement factor. A 2-D array of CdTe mesas (60 × 60μm) has been deposited onto a GaAs (100) substrate. Using imaging SIMS (secondary ion mass spectrometry) the distribution of major elements and impurities have been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 183
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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