Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T07:44:48.296Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Mixing of Titanium on Silicon Carbide

Published online by Cambridge University Press:  25 February 2011

T. R. Jervis ,
J-P. Hirvonen ,
M. Nastasi  and
M. R. Cohen
T. R. Jervis
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
J-P. Hirvonen
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
M. Nastasi
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
M. R. Cohen
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
Get access

Abstract

We have used excimer laser surface processing to melt and mix single Ti layers into the surface of polycrystalline SiC substrates. The mixing of Ti into the surface is very rapid and efficient. Examination of Rutherford backscattering (RBS) data for different mixing conditions shows the formation of a preferred composition at the Ti-substrate interface which propagates from the interface with further mixing. Reconstruction of the RBS spectrum indicates that the composition of the layer is Ti45C37Si18. X-ray diffraction demonstrates the formation of Ti suicides and carbides in the surface region. Profiling of C in both mixed and uncoated samples by 6 MeV He+ scattering demonstrates that laser processing of the SiC does not cause major changes in the stoichiometry of the substrate material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 395
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 McHargue, C. J., in Structure-Property Relationships in Surface Modified Ceramics, edited by McHargue, C. J. et al. , pp 253–273 (Kluwer Academic Publishers, 1989).Google Scholar
2 More, K. L., Davis, R. F., Appleton, B. R., Lowndes, D., & Smith, P., Mat. Res. Soc. Symp. Proc. 51 445 (1985).Google Scholar
3 Singh, R. K., Jagannadham, K., & Narayan, J., J. Mater. Res. 3 1119 (1988).Google Scholar
4 Malveza, A. M., Bloembergen, N., & Huang, C. Y., Phys. Rev. Lett. 50 177 (1987).Google Scholar
5 Jervis, T. R., Hirvonen, J-P., & Nastasi, M., J. Mater. Res. 3 1104 (1988).Google Scholar
6 Singer, I. L., Wandass, J. H., in Structure-Property Relationships in Surface Modified Ceramics, edited by McHargue, C. J. et al. , pp 199–208 (Kluwer Academic Publishers, 1989).Google Scholar
7 Rudy, E., "Ternary Phase Equilibria in Transition Metal-B-C-Si Systems, Part V," Technical Report AFML-TR-65-2 (Air Force Materials Lab, Wright Patterson Air Force Base, OH, May, 1969), p 522.Google Scholar
8 Smithells Metals Reference Book, E. A. Brandes, Ed, 6th Ed. (Butterworths, London, 1983).Google Scholar
9 Jervis, T. R., Nastasi, M., & Hirvonen, J-P., in Laser/Optical Processing of Electronic Materials, Edited by J. Narayan, Proc. SPIE 1190 (1989).Google Scholar