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Laser Induced Temperature Rise In Semiconductors : Analytical Solutions, Application to the Transient
Published online by Cambridge University Press: 15 February 2011
Abstract
It is shown how the systematic use of the method of integral transforms greatly simplifies the calculation of the temperature rises in laser irradiated media. In general, this method leads ultimately either to analytical results or to very simple numerical integrals (e.g. no poles, exponential kernels). We focus here on the analytical results, and discuss some aspects of CW laser heating, for large surface absorption, including radial dependance, depth dependance and transient nonlinearities. The new results derived in this treatment are in good agreement with experimental data from other studies.
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- Copyright © Materials Research Society 1983
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Laboratoire associé au CNRS (LA250)
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