Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T17:53:01.584Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Induced Photochemical Vapor Deposition of Tungsten on Silicon

Published online by Cambridge University Press:  21 February 2011

A. J. P. van Maaren  and
W. C. Sinke
A. J. P. van Maaren
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands.
W. C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands.
Get access

Abstract

An ArF excimer laser (193 nm) aligned parallel to the substrate has been used to initiate photo-activation of the W-CVD process. W was deposited on silicon and SIMOX at a 310 °C substrate temperature using WF6 as a W precursor, together with H2. The samples were analyzed after deposition with SEM and 2 MeV He+ RBS, to obtain information about the reaction between WF6 and Si in laser-induced CVD of W. The data indicate that the reaction between WF6 and Si is suppressed upon laser irradiation. The suppression increases with increasing laser-pulse frequency. An explanation for this phenomenon is given in terms of atomic Hformation after (partial) photodissociation of WF6.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 293
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]Itoh, H., Moriya, T. and Kashiwagi, M., Solid State Technol., November 1987, 83.Google Scholar
[2]Maaren, A.J.P. van, Krans, R.L., Haas, E. de and Sinke, W.C., Appl. Surf. Sci. 38 (1989) 386.Google Scholar
[3] Supplied by IBIS Technology Corp., 32A Cherry Hill Drive, Danvers MA 01923.Google Scholar
[4]Maaren, A.J.P. van, Krans, R.L., Haas, E. de and Sinke, W.C., unpublished.Google Scholar
[5]Veen, J.F. van der, Surf. Sci. Rept. 5 (1985) 199.Google Scholar
[6]Muller, R.S. and Kamins, T.I., Device electronics for integrated circuits (Wiley and Sons New York 1986).Google Scholar
[7]Mende, G., Finster, J., Flamm, D. and Schulze, D., Surf. Sci. 128 (1983) 169.Google Scholar
[8] JEOL (EUROPE) B.V., Gebouw 105, Postbus 7648, 1117 ZJ Schiphol-Oost The Netherlands.Google Scholar
[9]Paine, D.C., Bravman, J.C. and Saraswat, K.C., Proc.Workshop on Tungsten and Other Refractory Metals for VLSI Applications, Ed. Blewer, R.S. (MRS Pittsburgh, PA, 1986) 117.Google Scholar
[10]Chu, W.-K., Mayer, J.W. and Nicolet, M.-A., Backscattering Spectrometry (Academic Press, Orlando, Florida 1978).Google Scholar
[11]Doolittle, L.R., Nucl. Instr. Methods B 9 (1985) 344.Google Scholar
[12]Broadbent, E.K. and Ramiller, C.L., J Electrochem. Soc. 131 (1984) 1427.Google Scholar
[13]Hitchman, M.L., Jobson, A.D. and Tz, L.F.. Kwakman, Appl. Surf. Sci. 38 (1989) 312.Google Scholar
[14]Bryant, W.A., J. Electrochem. Soc. 125 (1978) 1535.Google Scholar
[15]Putte, P. van der, Proc.Workshop on Tungsten and Other Refractory Metals for VLSI Applications II, Ed. Broadbent, E. K. (MRS Pittsburgh, PA, 1989) 77.Google Scholar
[16]Goodman, D.W. and Rye, R.R., Proc.Workshop on Tungsten and Other Refractory Metals for VLSI Applications, Ed. Blewer, R.S. (MRS Pittsburgh, PA, 1986) 93.Google Scholar
[17]Price, R.J., Jackman, R.B. and Foord, J.S., Proc 1987 EMRS vol XV, Ed. Golanski, A., Nguyen, V.T., and Krimmel, E.F. (Les Éditions de Physique, Les Ulis Cedex, 1987) 117.Google Scholar
[18]Yu, M.L., Eldridge, B.N. and Joshi, R.V., Proc.Workshop on Tungsten and Other Refractory Metals for VLSI Applications IV, Eds. Blewer, R.S. and McConica, C.M. (MRS Pittsburgh, PA, 1989) 221.Google Scholar
[19]Kuiper, A.E.T., Willemsen, M.F.C. and Schmitz, J.E.J., Appl. Surf. Sci. 38 (1989) 338.Google Scholar
[20]Shintani, A., Tsuzuku, S., Nishitani, E. and Nakatani, M., J. Appl. Phys. 61 (1987) 2365.Google Scholar
[21]Kompa, K.L., Chem. Phys. Lett. 12 (1972) 560.Google Scholar
[22]Green, M.L., Ali, Y.S., Boone, T., Davidson, B.A., Feldman, S.C. and Nakahara, S., J. Electrochem. Soc. 134 (1987) 2285.Google Scholar
[23]McConica, C.M. and Cooper, K.J., Proc.Workshop on Tungsten and Other Refractory Metals for VLSI Applications, Ed. Blewer, R.S. (MRS Pittsburgh, PA, 1986) 197.Google Scholar
[24]Schmitz, J.E.J., Dijk, A.J.M. van, Suijker, J.L.G., Buiting, M.J. and Ellwanger, R.C., Appl. Surf. Sci. 38 (1989) 350.Google Scholar