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Laser Induced Melting and Crystallization of Boron Doped Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

C. E. Nebel ,
S. Schöniger ,
B. Dahlheimer  and
M. Stutzmann
C. E. Nebel
Affiliation:
Walter Schottky Institut, TU-München, Am Coulombwall, D-85748 Garching, Germany
S. Schöniger
Affiliation:
Walter Schottky Institut, TU-München, Am Coulombwall, D-85748 Garching, Germany
B. Dahlheimer
Affiliation:
Walter Schottky Institut, TU-München, Am Coulombwall, D-85748 Garching, Germany
M. Stutzmann
Affiliation:
Walter Schottky Institut, TU-München, Am Coulombwall, D-85748 Garching, Germany
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Abstract

Transient reflectivity experiments have been performed to measure the dynamics of laser-induced melting of amorphous silicon (a-Si) and the crystallization to μ-Si of films with different thicknesses on Corning 7059 glass. The laser-induced melting takes place with a velocity of 13 to 24 m/s, while the solidification is about a factor 10 slower. The crystallization starts at the Si/glass interface and at the surface. In the center of the films, Si remains liquid for an extended period of time. The crystallization dynamics point towards an heterogeneous morphology of laser-crystallized Si, where the surface and the interface layers are composed of small grains and the bulk of larger grains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 421
Copyright
Copyright © Materials Research Society 1997

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References

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