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Laser Induced Diffusion of Radioactive As into Si

Published online by Cambridge University Press:  15 February 2011

Loren Pfeiffer ,
T. Kovacs ,
G. K. Celler ,
L. E. Trimble  and
D. C. Jacobson
Loren Pfeiffer
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974
T. Kovacs
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974
G. K. Celler
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974
L. E. Trimble
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974
D. C. Jacobson
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974
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Abstract

A high efficiency technique for incorporating As or other high volatility elements into Si and other semiconductors by laser pulse processing is described. By this method more than 80% of the As atoms painted onto a Si surface were made to relocate onto substitutional sites in the 73Si crystal. Mossbauer analysis of laser diffused As atoms in a Ge crystal indicates that although the final As sites are >97% substitutional, the majority are associated with one or more defects not seen in conventionally diffused material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 275
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. The authors are aware of work by two groups on LID in the literature: Narayan, J., Young, R. T., Wood, R. F. and Christie, W. H., Appl. Phys. Lett. 33, 338–340 (1978) andCrossRefGoogle Scholar
1a Stuck, R., Fogarassy, E., Grob, A., Grob, J. J., Muller, J. C. and Siffert, P. in Proc. of Symp. on Laser & Electron Beam Processing of Electronic Materials, Electrochemical Soc. Proceedings Volume 80–1, 193–203 (1980). Neither of these papers is concerned with the incorporation efficiency of high vapor pressure dopants by LID.Google Scholar
2. Pfeiffer, Loren, Phys. Rev. Lett. 38, 862–865 (1977).Google Scholar
3. Pfieffer, Loren, Phys. Rev. B 23, 5725–8 (1981).Google Scholar
4. Another calibration of the 73Ge isomer shift based on the newly measured Si:Ge shift is to be published soon.Google Scholar
5. Review paper by Miller, G. L., Electrochemical Society Proceedings Vol. 80–1, 83 (1980). In particular see the discussion pertaining to Fig.17.Google Scholar