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Laser Induced Decomposition of Triethylgallium and Trimethylgallium Adsorbed on GaAs(100)

Published online by Cambridge University Press:  25 February 2011

J. A. Mccaulley ,
V. R. Mccrary  and
V. M. Donnelly
J. A. Mccaulley
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill NJ, 07974
V. R. Mccrary
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill NJ, 07974
V. M. Donnelly
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill NJ, 07974
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Abstract

We report X-ray photoelectron spectroscopy (XPS) studies of excimer laser stimulated decomposition of triethylgallium (TEGa) and trimethylgallium (TMGa) adsorbed on Gastabilized GaAs(100) surfaces in ultrahigh vacuum. TEGa and TMGa dissociatively chemisorb on GaAs at room temperature, whereupon irradiation by an excimer laser (at 193 or 351 nm) leads to further dissociation and desorption of carbon-containing species. The carbon removal rate (per laser pulse) decreases as carbon is removed suggesting multiple reaction sites, coverage dependent Arrhenius parameters, or second-order reactions. Based on the dependence of the rate on laser wavelength and fluence, we conclude that at low fluence, a two-photon electronic excitation of the adsorbate occurs, while at high fluence, laser induced pyrolysis dominates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 159
Copyright
Copyright © Materials Research Society 1989

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References

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