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Laser Induced Crystal Growth of Silicon Islands on Amorphous Substrates

Published online by Cambridge University Press:  15 February 2011

D. K. Biegelsen ,
N. M. Johnson ,
D. J. Bartelink  and
M. D. Moyer
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Centers, 3333 Coyote Hill Road, Palo Alto, California 94304, USA
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Centers, 3333 Coyote Hill Road, Palo Alto, California 94304, USA
D. J. Bartelink
Affiliation:
Xerox Palo Alto Research Centers, 3333 Coyote Hill Road, Palo Alto, California 94304, USA
M. D. Moyer
Affiliation:
Xerox Palo Alto Research Centers, 3333 Coyote Hill Road, Palo Alto, California 94304, USA
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Abstract

The importance of controlled lateral heat flow in the growth of single crystal silicon islands on amorphous substrates is demonstrated. In one approach the thermal profile on and around the islands is determined by varying the optical absorption with a variety of thin film structures. In another, beam spot shaping is used. Competitive nucleation is suppressed and continued in-plane epitaxial zone growth is enhanced. In this way we are able to produce single crystal islands 20μm wide and >20μm long. Routine production of such islands would enable new thin film transistor technologies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 487
Copyright
Copyright © Materials Research Society 1981

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References

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