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Laser Induced Controlled Nucleation and Growth Process For Large Grained Polycrystalline Silicon*

Published online by Cambridge University Press:  15 February 2011

S.C. Danforth ,
F. Van Gieson ,
J.S. Haggerty  and
I. Kohatsu
S.C. Danforth
Affiliation:
Energy Laboratory and Department of Materials Science, Massachusetts Institute of Technology, Room 12–063, Cambridge, Massachusetts 02139
F. Van Gieson
Affiliation:
Energy Laboratory and Department of Materials Science, Massachusetts Institute of Technology, Room 12–063, Cambridge, Massachusetts 02139
J.S. Haggerty
Affiliation:
Energy Laboratory and Department of Materials Science, Massachusetts Institute of Technology, Room 12–063, Cambridge, Massachusetts 02139
I. Kohatsu
Affiliation:
Energy Laboratory and Department of Materials Science, Massachusetts Institute of Technology, Room 12–063, Cambridge, Massachusetts 02139
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Abstract

Research on a new process is described which utilized a laser to achieve controlled crystallization of amorphous Si thinfilms for photovoltaic applications. Amorphous Si films are deposited on suitable substrates using RF sputtering. A laser is used to inoculate these films with crystalline embryos at specific locations. These embryos should then grow in a controlled atmosphere annealing furnace under conditions optimized to maintain the nucleation rate at zero and the transformation rate (from amorphous to crystalline silicon) at a maximum value. The result will be a polycrystalline silicon film with a large grain size to film thickness ratio, where the ultimate grain size will be determined by the laser inoculation spacing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 443
Copyright
Copyright © Materials Research Society 1981

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Footnotes

*

This research was conducted with the support of the U.S. Department of Energy, Grant No. DE-FG01-79ET-00081. However, any opinions, findings, conclusions, or recommendations expressed herein are those of the authors and do not necessarily reflect the views of DOE.

References

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