Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-18T10:10:21.710Z Has data issue: false hasContentIssue false

Laser Fabrication of Sharp Conical Microstructures on Si Thin Films by Nd:YAG Laser Single Pulse Irradiation

Published online by Cambridge University Press:  01 February 2011

Daniel Georgiev
Affiliation:
[email protected], University of Toledo, Department of Electrical Engineering and Computer Science, Mail Stop 308, Toledo, OH, 43606, United States
Daniel Georgiev
Affiliation:
[email protected], University of Toledo, Dept. of Electrical Engineering and Computer Science, Dept. of Electrical Engineering and Computer Science, Mail Stop 308, Toledo, OH, 43606, United States
Get access

Abstract

Conical microstructures with nanoscale sharpness form on silicon films as a result of single-pulse, localized UV irradiation using a solid-state, Q-switched Nd:YAG laser. Projection imaging of pinhole apertures was employed to obtain micron-sized irradiation spots on the surface of silicon-on-insulator samples. The formation of these structures requires melting of the silicon film and was followed at different laser fluence levels and irradiation spot sizes. Atomic force microscopy (AFM) was used to characterize the structures. After fabricating small arrays of such micro-cones, the silicon top layer was selectively etched away in order to understand the role of the underlying silicon oxide. AFM images of such etched samples revealed that the topography of the oxide material below the cones had been significantly modified: bumps with heights that represent a significant fraction of the original Si cone height have formed. This suggests that substrate melting plays an important role in the mechanism of formation of the silicon cones.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Spindt, C.A. Brodie, I. Humphrey, L. Westerberg, E.R. J. Appl. Phys. 47, 5248 (1976)Google Scholar
2. Dvorson, L. Kymissis, I. Akinwande, A.I. J. Vac.Sci.Technol. B, 21, 486 (2003)Google Scholar
3. Busta, H. H. J. Micromech. Microeng. 2, 43 (1992)Google Scholar
4. Turner, S. Kam, L. Isaacson, M. Craighead, H.G. Shain, W. Turner, J. J.Vac.Sci.Technol. B 15, 2848 (1997)Google Scholar
5. Turner, A.M.P. Dowel, N. Turner, S.W.P. Kam, L. Isaacson, M. Turner, J.N. Craighead, H.G. Shain, W. J. Biomedical Res. 51, 430 (2000)Google Scholar
6. Maher, M.P. Pine, J. Wright, J. Tai, Y.C. J. Neuroscience Methods 87, 45 (1999)Google Scholar
7. Pedraza, A.J. Fowlkes, J.D. Lowndes, D.H. Appl.Phys.Lett. 74, 2322 (1999)Google Scholar
8. Pedraza, A.J. Fowlkes, J.D. Guan, Y.F. Appl.Phys. A 77, 277 (2003)Google Scholar
9. Tang, Y.F. Silva, S.R.P. Boskovic, B.O. Shannon, J.M. Appl. Phys. Lett. 80, 4154 (2002)Google Scholar
10. Georgiev, D.G. , Baird, R.J. Avrutsky, I. Auner, G., Newaz, G. Appl. Phys. Lett., 84 (2004) 4881 Google Scholar
11. Wysocky, G. Denk, R. Piglmayer, K. Arnold, N. Bauerle, D. Appl. Phys. Lett, 82 (2003) 692 Google Scholar
12. Bäuerle, D., Laser Processing and Chemistry (Springer-Verlag, Berlin, 2000).Google Scholar
13. Eizenkop, J. Avrutsky, I., Auner, G., Georgiev, D.G. , Chaudhary, V. J. Appl. Physics, 101 (2007) 94301 Google Scholar
14. Unamino, S. De, Fogarassy, E. Appl. Surf. Sci., 36, 1 (1989)Google Scholar