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Laser Fabrication of Micron-Size Structures on CdS
Published online by Cambridge University Press: 21 February 2011
Abstract
Wet and dry laser-etching experiments have been performed on polished CdS crystals, using a CW Ar laser, with the goal of writing patterns with μm linewidth. A nitric acid solution was found to exhibit no appreciable dark etching and high photoetching rate; surface roughening due to scattered light was its limitation. A dry, low-temperature (< 200°C) laser-etching process was also studied, and used to produce satisfactory line patterns with 1- to 5-μm linewidths and a 3:1 depth ratio.
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- Copyright © Materials Research Society 1984
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