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Laser Fabrication of Micron-Size Structures on CdS

Published online by Cambridge University Press:  21 February 2011

V. Daneu
Affiliation:
M.I.T. Lincoln Laboratory, Lexington, MA 02173
J. Peers
Affiliation:
M.I.T. Lincoln Laboratory, Lexington, MA 02173
A. Sanchez
Affiliation:
M.I.T. Lincoln Laboratory, Lexington, MA 02173
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Abstract

Wet and dry laser-etching experiments have been performed on polished CdS crystals, using a CW Ar laser, with the goal of writing patterns with μm linewidth. A nitric acid solution was found to exhibit no appreciable dark etching and high photoetching rate; surface roughening due to scattered light was its limitation. A dry, low-temperature (< 200°C) laser-etching process was also studied, and used to produce satisfactory line patterns with 1- to 5-μm linewidths and a 3:1 depth ratio.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

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References

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