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Laser Direct Writing of Aluminum

Published online by Cambridge University Press:  26 February 2011

T. Cacouris ,
G. Scelsi ,
R. Scarmozzino ,
R.M. Osgood Jr.  and
R.R. Krchnavek
T. Cacouris
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, N.Y. 10027
G. Scelsi
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, N.Y. 10027
R. Scarmozzino
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, N.Y. 10027
R.M. Osgood Jr.
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, N.Y. 10027
R.R. Krchnavek
Affiliation:
Bell Communications Laboratories, 435 South Str., Morristown, N.J. 07960
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Abstract

We report, for the first time, laser direct writing of high conductivity aluminum interconnects from dimethylaluminum hydride (DMALH). These lines were deposited from a metallorganic gas with a focused deep-UV laser beam and were directly connected to aluminum test structures. Electrical measurements and Auger electron spectroscopy were used to characterize the laser deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 43
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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