Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T02:26:30.548Z Has data issue: false hasContentIssue false

Laser Deposited Ag3SbS3 and Tl3SbS3 Nanoscale Thin Films as Potential Electric Field Sensors

Published online by Cambridge University Press:  01 February 2011

Halyna Khlyap
Affiliation:
[email protected], University of Technology, Physics, E.-Schrödinger-Str.56, Kaiserslautern, D-67663, Germany
Lyudmila Panchenko
Affiliation:
Sumy State University, Experimental Physics, Rimskii-Korsakov str.4, Sumy, UA-48650, Ukraine
Victor Laptev
Affiliation:
University of Stuttgart, Instutute of Physical Electronics, Pfaffenwaldring, 47, Stuttgart, D-70569, Germany
Petro Shkumbatiuk
Affiliation:
State Pedagogical University, General Physics, Franko str.24, Drohobych, UA-82100, Ukraine
Violetta Bilozertseva
Affiliation:
National Technical University "KPI", General and Experimental Physics, Frunze-str. 21, Kharkov, UA-61002, Ukraine
Get access

Abstract

Phase composition and electrical properties of Ag(Tl)SbS amorphous films obtained by pulse laser deposition technology are investigated. The films deposited on crystalline NaCl and Kcl substrates are amorphous with crystalline phase inclusions. Room-temperature current voltage characteristics showed a good electro-sensitivity of the films under applied bias up to 10 V and a space-charge-limited current was registered as a principal component of the charge carrier transport.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Adler, D., Shur, M. S., Silver, M., and Ovchinsky, S. R., J. Appl. Phys. 51, 3289 (1979).Google Scholar
2. Pirovano, A., Lacaita, A. L., Benvenuti, A., Pelizzer, F. and Bez, R., IEEE Trans. On Electron Devices 51, 452 (2004).Google Scholar
3. Fang, Y. H., Kuo, P. C., Chen, P. W., Hsu, Wie-Chih, Chou, C. Y. and Wu, T. H., Appl. Phys. Lett. 88, 261917 (2006).Google Scholar
4. Fantini, P., Pirovano, A., Vetrice, D. and Redaelli, A., Appl. Phys. Lett. 88, 263506 (2006).Google Scholar
5. Schroder, D. K., Semiconductor Material and Device Characterization (3rd Edition), John Wiley & Sons Inc., 2006.Google Scholar
6. Khlyap, H., Bilozertseva, V., Dyakonenko, N., in Proceedings of 14th Int. Conf. on Cryst. Growth (Grenoble, France, 9–13 Aug. 2004) p.183.Google Scholar
7. DIFFRACplus Reference Database Manager, 2005.Google Scholar
8. Khlyap, H., Bilozertseva, V., Andrukhiv, M., Panchenko, L., in Proceedings of SPIE, V.4412, p. 211215.Google Scholar
9. Khlyap, H., Bilozertseva, V., Panchenko, L., Andrukhiv, M., Shkumbatiuk, P., in Proceedings of Mater. Res. Soc. Symp. V. 874, p.J9.16.1 –MRS, San-Francisco, 2005.Google Scholar