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Laser CVD of A-Si:H: Film Properties and Mechanism

Published online by Cambridge University Press:  25 February 2011

K. Hesch ,
P. Hess ,
H. Oetzmann  and
C. Schmidt
K. Hesch
Affiliation:
Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, D-6900 Heidelberg, F.R.G.
P. Hess
Affiliation:
Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, D-6900 Heidelberg, F.R.G.
H. Oetzmann
Affiliation:
Asea Brown Boveri AG, Corporate Research Eppelheimer Strasse 82, D-6900 Heidelberg, F.R.G.
C. Schmidt
Affiliation:
Asea Brown Boveri AG, Corporate Research Eppelheimer Strasse 82, D-6900 Heidelberg, F.R.G.
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Abstract

Films of a- Si: Hwere deposited from Sill4 in a parallel configuration employing acw CO2 laser. Infrared spectra, photoconductivities and dark conductivities of the films were studied as a function of surface temperature between 250°C and400° C. The results are compared with data obtained from deposition experiments using Si2H6 and an ArF laser. Implications for the mechanism of LICVD are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 495
Copyright
Copyright © Materials Research Society 1989

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References

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