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Laser Chemical Vapor Deposition of W on Si and SiO2/Si

Published online by Cambridge University Press:  21 February 2011

Jian-Yang Lin  and
Susan D. Allen
Jian-Yang Lin
Affiliation:
Chung Cheng Institute of Technology, Department of Electrical Engineering Ta-Shi, Taiwan 33509, R. O. C
Susan D. Allen
Affiliation:
The University of Iowa, Center for Laser Science and Engineering Iowa City, IA 52242, U. S. A
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Abstract

Direct write of W on bare Si and native SiO2/Si substrates has been investigated in an laser chemical vapor deposition (LCVD) system. W deposits on bare Si surface via the Si and/or H2 reduction of WF6 were self-limited in thickness to 200 - 600 Å in both cases. Auger electron spectroscopic analysis showed that Si-H bonds could be poisoning the further growth of W. W deposits on native SiO2/Si were only obtainable via the H2 reduction of WF6 in our laser direct-write system. Our experimental kinetic study indicated that HF desorption from the surface is the rate-controlling step for W deposition via the H2 reduction of WF6. The as-deposited W line deposits were 2 - 10 μm wide, 0.2 - 6 μm thick with resistiiities in the range of 11 - 56 μΩ-cm. Growth rates as high as 2.2 mm/s have been achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 85
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Barananskas, V., Mammana, C. I. Z., Elinger, R. E., and Greene, J. E., Appl. Phys. Lett. 36, 930 (1980).Google Scholar
2. Allen, S/ D., J. Appl. Phys. 52, 6501 (1981).Google Scholar
3. Leyendecker, G., Bauerle, D., Geittner, P., and Lydtin, H., Appt. Phys. Lett. 9, 921 (1981).Google Scholar
4. Ehrlich, D. J., Osgood, R. M. Jr., and Deutsch, T. F., Appl. Phys. Lett. 39, 57 (1981).Google Scholar
5. Shen, B. W., and Smith, G. C., J. Vac. Sci. Tech. B4, 1369 (1986).Google Scholar
6. Busta, H. H. and Tang, C. H., J. Electrochem. Soc. 133, 1195 (1986).Google Scholar
7. McConica, C. M. and Krishnamani, K., J. Electrochem. Soc. 133, 2542 (1986).Google Scholar
8. McFeeley, F. R. (private communication).Google Scholar
9. Su, P. H. and Allen, S. D. (to be published).Google Scholar