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Laser Chemical Vapor Deposition of W on Si and SiO2/Si

Published online by Cambridge University Press:  21 February 2011

Jian-Yang Lin  and
Susan D. Allen
Jian-Yang Lin
Affiliation:
Chung Cheng Institute of Technology, Department of Electrical Engineering Ta-Shi, Taiwan 33509, R. O. C
Susan D. Allen
Affiliation:
The University of Iowa, Center for Laser Science and Engineering Iowa City, IA 52242, U. S. A
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Abstract

Direct write of W on bare Si and native SiO2/Si substrates has been investigated in an laser chemical vapor deposition (LCVD) system. W deposits on bare Si surface via the Si and/or H2 reduction of WF6 were self-limited in thickness to 200 - 600 Å in both cases. Auger electron spectroscopic analysis showed that Si-H bonds could be poisoning the further growth of W. W deposits on native SiO2/Si were only obtainable via the H2 reduction of WF6 in our laser direct-write system. Our experimental kinetic study indicated that HF desorption from the surface is the rate-controlling step for W deposition via the H2 reduction of WF6. The as-deposited W line deposits were 2 - 10 μm wide, 0.2 - 6 μm thick with resistiiities in the range of 11 - 56 μΩ-cm. Growth rates as high as 2.2 mm/s have been achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 85
Copyright
Copyright © Materials Research Society 1990

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References

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