Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T15:37:40.728Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Beam Lithography of Metal Oxide Electrodes for PZT Memory Applications

Published online by Cambridge University Press:  15 February 2011

Jarrod L. Norton ,
Said A. Mansour ,
G. L. Liedl ,
Arden L. Bement Jr. ,
Elliott B. Slamovich  and
C. Venkatraman
Jarrod L. Norton
Affiliation:
Purdue University, School of Materials Engineering, West Lafayette, IN 47907-1289.
Said A. Mansour
Affiliation:
Purdue University, School of Materials Engineering, West Lafayette, IN 47907-1289.
G. L. Liedl
Affiliation:
Purdue University, School of Materials Engineering, West Lafayette, IN 47907-1289.
Arden L. Bement Jr.
Affiliation:
Purdue University, School of Materials Engineering, West Lafayette, IN 47907-1289.
Elliott B. Slamovich
Affiliation:
Purdue University, School of Materials Engineering, West Lafayette, IN 47907-1289.
C. Venkatraman
Affiliation:
Purdue University, School of Materials Engineering, West Lafayette, IN 47907-1289.
Get access

Abstract

Current metal/metal oxide patterning techniques typically involve photolithography, an expensive, time-consuming process, and/or a vacuum system, which also adds significantly to the cost. In this study, fabrication of metal oxide upper electrodes for Pb(ZrxTi1-x)O3 (PZT) memories by metallorganic decomposition (MOD) was coupled with laser beam patterning. Metal oxide organic precursors were treated with an absorption-enhancing dye and were spun on to ferroelectric PZT films followed by selective area laser beam exposure. This technique was employed to pattern RuO2 and (La,Sr)CoO3 electrodes. A variety of patterns (dot, line, and circular) were prepared which demonstrates the suitability of laser patterning for a variety of applications. The minimum power density required to generate a continuous conductive oxide pattern was found to be approximately 2.5 kW/cm2 at a scan speed of 25 mm/min. Resistivity values for the patterned lines were 660 Ω-cm for RuO2 and 59 mΩ-cm for LSCO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 380: Symposium D – Materials–Fabrication and Patterning at the Nanoscale , 1995 , 99
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Sands, T. (private communication).Google Scholar
2 Scott, J.F., Paz de Araujo, C.A., Science 76 (12), 1400 (1989).Google Scholar
3 Dhote, A.M., Patil, S.C., Kanetkar, S.M., Gangal, S.A., Ogale, S.B., J. Mater. Res 7 (7), 1685 (1992).Google Scholar
4 Hoffmann, P., Lecohier, B., Goldoni, S., Van Den Berge, H., Appl. Surface Science 43, 54 (1989).Google Scholar
5 Abell, T., M.S. Thesis, Purdue University, 1991.Google Scholar
6 Gifford, K.D., Auciello, O., Kingon, A.I., Integrated Ferroelectrics 7, 195 (1995).Google Scholar
7 Ramesh, R.. Gilchrist, H., Sands, T., Keramidas, V.G., Haakenaasen, R., Fork, D.K., Appl. Phys. Lett. 63, 3592 (1993).Google Scholar
8 Vest, R., Ferroelectrics 102, 53 (1990).Google Scholar
9 Aldrich Chemical Co, Inc., Product #19,819-6 Information SheetGoogle Scholar