Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-17T20:14:24.442Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Assisted Seeding for Electroless Plating on Insulators

Published online by Cambridge University Press:  01 January 1992

A.G. Schrott ,
B. Braren ,
E.J.M. O'sullivan  and
R.F. Saraf
A.G. Schrott
Affiliation:
IBM Research Division, T.J. Watson Res. Ctr. Yorktown Heights, NY 10598
B. Braren
Affiliation:
IBM Research Division, T.J. Watson Res. Ctr. Yorktown Heights, NY 10598
E.J.M. O'sullivan
Affiliation:
IBM Research Division, T.J. Watson Res. Ctr. Yorktown Heights, NY 10598
R.F. Saraf
Affiliation:
IBM Research Division, T.J. Watson Res. Ctr. Yorktown Heights, NY 10598
Get access

Abstract

Excimer laser pulses with wavelengths of 248 and 308 nm were used to selectively seed Pd on SiO2 surfaces, making them suitable for electroless plating. This novel seeding process for insulating materials is accomplished with the sample immersed in the seeding solution, and occurs only on the areas of the substrate that are illuminated (through the liquid) by the laser light. The Pd content of the seeded samples increased with the number of pulses, but was rather independent of repetition rate. The deposition rate showed a dependence with wavelength consistent with a defect driven mechanism for electron excitation through the band gap of SiO2. These electrons then reduce the Pd ions in the solution in contact with the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 197
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Esrom, H. and Wahl, G., Chemtronics 4, 217 (1989).Google Scholar
2. Baum, T.H. and Jones, C.R., Appl. Phys. Lett. 47, 538 (1985).Google Scholar
3. Von Gutfeld, R.J. and Vigliotti, D.R., Appl. Phys Lett. 56, 2584 (1990).Google Scholar
4. Jacobs, J.W.M. and Nillesen, C.J.C.M., J. Vac. Sci. Technol. 8, 635 (1990).Google Scholar
5. Schrott, A.G., Braren, B., O'Sullivan, E.J.M., Saraf, R. and Roldan, J., to be published.Google Scholar
6. LaFemina, J.P., Arjavalingam, G. and Hougham, G., J. Chem. Phys, 90, 5154 (1989).Google Scholar
7. Zweig, A.D., Deutsch, T.F., App. Phys. B 54, 76 (1992).Google Scholar
8. P, M.. Seah in PracticalSurface Analysis, ed. by Briggs, D. and Seah, M.P. (Wiley, NY, 1983) Ch. 5.Google Scholar
9. DiStefano, T.H. and Eastman, D.E., Solid State Commun. 9, 2259 (1971).Google Scholar
10. Arai, K., Imai, H., Hosono, H., Abe, Y. and Imagawa, H., Appl. Phys. Lett. 53, 1891 (1988).Google Scholar