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Laser Assisted Atomic Layer Epitaxy-A Vehicle to Optoelectronic Integration

Published online by Cambridge University Press:  16 February 2011

Q. Chen ,
J. S. Osinski ,
C. A. Beyler ,
M. Cao ,
P. D. Dapkus ,
J. J. Alwan  and
J. J. Coleman
Q. Chen
Affiliation:
Departments of Materials Sciences and Electrical Engineering and Center for Photonic Technology, University of Southern California, Los Angeles, CA 90089.
J. S. Osinski
Affiliation:
Departments of Materials Sciences and Electrical Engineering and Center for Photonic Technology, University of Southern California, Los Angeles, CA 90089.
C. A. Beyler
Affiliation:
Departments of Materials Sciences and Electrical Engineering and Center for Photonic Technology, University of Southern California, Los Angeles, CA 90089.
M. Cao
Affiliation:
Laser Institute, Huazhong University of Science and Technology, Wuhan 430074, Hubei, P.R.China.
P. D. Dapkus
Affiliation:
Departments of Materials Sciences and Electrical Engineering and Center for Photonic Technology, University of Southern California, Los Angeles, CA 90089.
J. J. Alwan
Affiliation:
Department of Electrical Engineering, University of Illinois, 1406 W. Green Street, Urbana, IL 61801.
J. J. Coleman
Affiliation:
Department of Electrical Engineering, University of Illinois, 1406 W. Green Street, Urbana, IL 61801.
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Abstract

Two implementations of laser assisted atomic layer epitaxy(LALE) for selective area growth of GaAs using trimethylgallium and AsH3 as precursors are described. A wide range of growth parameters lead to self-limiting monolayer/cycle growth which is suited for precise layer thickness control. By combining LALE with conventional metalorganic chemical vapor deposition, A10.3Ga0.7As/GaAs double heterostructures including LALE GaAs have been grown, permitting electrical and optical characterization to be performed on the thin and small areas of the LALE deposits. The information is used in a growth parameter optimization process resulting in device quality GaAs. Quantum well lasers with active region grown by LALE are demonstrated for the first time. The application of LALE to optoelectronic integration is demonstrated by depositing small area quantum wells as the gain medium in an otherwise transparent waveguide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 109
Copyright
Copyright © Materials Research Society 1991

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