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Laser Annealing of the Double-Hetero Si(lll)/CoSi2/Si Structure

Published online by Cambridge University Press:  15 February 2011

Hiroshi Ishiwara ,
Shuichi Saitoh ,
Kuniaki Mitsui  and
Seijiro Furukawa
Hiroshi Ishiwara
Affiliation:
Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama, 227, Japan
Shuichi Saitoh
Affiliation:
Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama, 227, Japan
Kuniaki Mitsui
Affiliation:
Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama, 227, Japan
Seijiro Furukawa
Affiliation:
Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama, 227, Japan
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Abstract

Theoretical and experimental studies on the laser annealing of a Si/CoSi2/Si structure are presented. The power absorption in each layer in this structure is theoretically considered using the refractive index and extinction coefficient in CoSi2 and Si, which have been measured by the ellipsometric analysis. Next, an amorphous Si film deposited onto a Si(lll)/CoSi2 structure is annealed by a Q-switched ruby laser. It has been shown from Rutherford backscattering and channeling measurements that the Si film grows epitaxially onto the Si/CoSi2 structure and that an optimum power density to minimize the aligned yield in a Si film 100 nm thick exists around 1.5 J/cm2. Reflecticn electron diffraction and otpical ricroscope analyses are also used to check the crystalline quality and surface structures of the laser-annealed samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 525
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Bozler, C.O., Alley, G.D., Murphy, R.A., Flanders, D.C., and Lindley, W.T., Tech. Dig. Int. Electron. Devices Meeting 16.2 (1979)Google Scholar
2. Saitoh, S., Ishiwara, H. and Furukawa, S., Appl. Phys. Lett. 37, 203 (1980)CrossRefGoogle Scholar
3. Saitoh, S., Ishiwara, H. and Furukawa, S., Proc. 12th Conf. on Solid State Devices Tokyo, 1979, Japan. J. Appl. Phys. Suppl. (in press)Google Scholar
4. Saitoh, S., Sugii, T., Ishiwara, H. and Furukawa, S., Japan. J. Appl. Phys. (to be submited)Google Scholar
5. Cullis, A.G., Webber, H.C. and Bailey, P., J. Phys. E. Sci.Instrum. 12, 688 (1979)CrossRefGoogle Scholar
6. Born, M. and Wolf, E., Principles of Optics' (Pergamon, Oxford, 1975)Google Scholar
7. Motooka, T. and Watanabe, K., J. Appl. Phys. 51, 4125 (1980)CrossRefGoogle Scholar
8. Zanzucchi, P.J., Wronski, C.R. and Carlson, D.E., J. Appl. Phys. 48, 5227 (1977)CrossRefGoogle Scholar
9. Hulthen, R., Phys. Ser. 12, 342 (1975)CrossRefGoogle Scholar
10. Baeri, P., Foti, G., Poate, J. M. and Cullis, A. G.; this symposium.Google Scholar