Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-20T11:30:18.391Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Annealing of Ion Implanted Semiconductors*

Published online by Cambridge University Press:  15 February 2011

J. Narayan
J. Narayan*
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tn 37830
Get access

Abstract

Photon energy from laser beams can be used to rapidly heat and melt localized regions of semiconductors with a high degree of spatial and temporal selectivity. Pulsed lasers have been successfully used to anneal displacement damage and to remove other defects. However, the number density of trapped defects increases with velocity of solidification and finally thin layers turn directly amorphous after laser-melt quenching. Annealing characteristics are found to be a strong function of ion implantation variables, which determine optical properties of materials. By both solid- and liquid-phase crystallization, supersaturated solid solutions can be formed. Residual defects in SPE grown layers primarily consist of dislocation loops. Device applications utilizing these transient thermal processing techniques are reviewed briefly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 491
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W–7405–eng–26 with Union Carbide Corporation.

References

REFERENCES

1. See e.g., Laser and Electron Bean Interactions with Solids, ed. by Appleton, B. R. and Celler, G. K., North Holland, New York, 1982.Google Scholar
2. See e.g., Laser-Solid Interactions and Transient Thermal Processing of Materials, ed. by Narayan, J., Brown, W. L. and Lemons, R. A., North Holland, New York, 1983, to be published.Google Scholar
3. Khaibullin, I. B., Shtyrkov, B. I., Zaripov, N. M., Bayazitore, R. M. and Galjautdinore, M.F., Radiat. Eff. 36, 225 (1978).Google Scholar
4. Van Vechten, J. A., Tsu, R., Saris, F. W. and Hoonhout, D., Phys. Lett. A 74, 417 (1979);CrossRefGoogle Scholar
Van Vechten, J. A., Tsu, R. and Saris, F. W., Phys. Lett. A 74,422 (1979).Google Scholar
5. Lo, H. W. and Compaan, A., Phys. Rev. Lett. 44, 1604 (1980).Google Scholar
6. Lowndes, D. H., Jellison, G. E. and Wood, R. F., Phys. Rev. B (Dec. 15, 1982)Google Scholar
7. Larson, B. C., White, C. W., Noggle, T. S. and Mills, D., Phys. Rev. Lett. 48, 337 (1982).CrossRefGoogle Scholar
8. Narayan, J., Fletcher, J., White, C. W. and Christie, W. H., J. Appl. Phys. 52, 7121 (1981).Google Scholar
9. Narayan, J. and Lowndes, D. H., to be published.Google Scholar
10. Marayan, J. and Holland, O. W., Appl. Phys. Lett. 41, 239 (1982).Google Scholar
11. White, C. W., Wilson, S. R., Appleton, B. R. and Young, F. W. Jr., J. Appl.Phys. 51, 739 (1980).Google Scholar
12. Young, R. T., Narayan, J., Rothe, D. E., van der Leeden, G. and Levatter, J. I., Ref. 2.Google Scholar
13. Stultz, T. J., Sturm, J. and Gibbons, J. F., Ref. 2.Google Scholar
14. Wu, W. K. and Washburn, J., J. Appl. Phys. 48, 3747 (1977).Google Scholar
15. Wood, R. F. and Giles, G. E., Phys. Rev. B 23, 2923 (1981).Google Scholar
16. Narayan, J. and Holland, O. W., unpublished.Google Scholar
17. Narayan, J., p. 389, Ref. 1.Google Scholar
18. Kimerling, L. C. and Benton, J. L., p. 385 in Laser and Electron Beam Processing of Materials, ed. by White, C. W. and Peercy, P. S., Academic Press, New York, 1980.Google Scholar
19. Narayan, J. and Young, F. W. Jr., Appl. Phys. Lett. 35, 330 (1979).Google Scholar
20. Holland, O. W., Narayan, J., White, C. W. and Appleton, B. R., Ref. 2, to be published.Google Scholar
21. Holland, O. W., Appleton, B. R. and Narayan, J., J. Appl. Phys. (in press).Google Scholar
22. Cahn, J. W., Coriell, S. R. and Boettinger, W. J., p. 89 in Ref. 18.Google Scholar
23. Fan, J.C.C. and Anderson, C. H., J. Appl. Phys. 52, 4003 (1981).CrossRefGoogle Scholar
24. Young, R. T., Wood, R. F., Narayan, J., White, C. W. and Christie, W. H., IEEE Trans. ED–27, 807 (1980).Google Scholar
25. Narayan, J., Young, R. T., Wood, R. F. and Christie, W. H., Appl. Phys. Lett. 33, 338 (1978).Google Scholar
26. Young, R. T., van der Leeden, G., Narayan, J., Christie, W. H., Wood, R. F., Rothe, D.E. and Levatter, J. I., IEEE Elect. Dev. Lett. EDL–3, 280 (1982).Google Scholar