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Laser Annealing of Hydrogenated Amorphous Silicon ThickFilms

Published online by Cambridge University Press:  15 February 2011

Nagarajan Sridhar ,
D. D. L. Chung ,
W. A. Anderson ,
L. P. Fu  and
A. Petrou
Nagarajan Sridhar
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, NY 14260–4400, and J. Coleman, Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
D. D. L. Chung
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, NY 14260–4400, and J. Coleman, Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
W. A. Anderson
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, NY 14260–4400, and J. Coleman, Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
L. P. Fu
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, NY 14260–4400, and J. Coleman, Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
A. Petrou
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, NY 14260–4400, and J. Coleman, Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
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Abstract

Hydrogenated amorphous silicon thick films deposited by dc glow discharge onmolybdenum substrates were annealed by a pulsed Nd:glass laser. Massspectrometry showed hydrogen remaining in all the laser annealed films. Theamount of hydrogen remaining decreased with decreasing scan rate. Thehydrogen evolved upon heating at 365 °C and mainly at 658 °C before laserannealing, but at 365, 575 (Mainly) and 645 °C after laser annealing,indicating weakening of the silicon-hydrogen bonding after laser annealing.The presence of hydrogen inhibited crystallization, as indicated by Ramanscattering. The photo and dark conductivity of the film increased by one andthree orders of magnitude respectively with increasing laser energy densityup to 12 J/cm2 at a fixed scan rate. This Means that thephotoresponse was decreased with laser annealing, in spite of the associatedincrease in crystallinity. This photoresponse decrease is attributed to thehydrogen evolution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 719
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Chu, T. L., J. Cryst. Growth 39, 45 (1977).Google Scholar
2. Carlson, D. E., RCA Internal Report, SAN1286–8 (1978).Google Scholar
3. Seager, C. H. and Ginley, D. S., Appl. Phys. Lett. 24, 337 (1979).Google Scholar
4. Sussmann, R. S., Harris, A. J. and Ogden, R., J. Non-Cryst. Solids 35, 249 (1980).Google Scholar
5. Koh, Y. K., Okamoto, H., Murakami, K., Gamo, K., Hamakawa, Y. and Namba, S., Jap. J. Appl. Phys. 19, 849 (1980).Google Scholar
6. Calder, I. D., Kavanaugh, K. L., Naguib, H. M., Brassard, C., Currie, J. F., Depelsenaire, P. and Groleau, R., J. Electron. Mater. 11, 303 (1982).Google Scholar
7. Pankove, J. I., Wu, C. P., Magee, C. W. and McGinn, J. T., J. Electron. Mater. 9, 905 (1980).Google Scholar
8. Mathe, E. L., Naudon, A., Elliq, M., Fogarassy, E. and de Unamuno, S., Appl. Surf. Sci. 54, 392 (1992).Google Scholar
9. Sridhar, N., Chung, D. D. L., Anderson, W. A., Yu, W. Y., Fu, L. P., Petrou, A. and Coleman, J., MRS Fall Proceedings, Symposium E (1993).Google Scholar