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Laser Annealing of Ferroelectric SrBi2Ta2O9, Pb(ZrXTi1-X)O3 and CeMnO3 Thin Films

Published online by Cambridge University Press:  01 February 2011

N. M. Sbrockey ,
J. D. Cuchiaro ,
L. G. Provost ,
C. E. Rice ,
S. Sun ,
G. S. Tompa ,
R. L. DeLeon  and
T. S. Kalkur
N. M. Sbrockey
Affiliation:
Structured Materials Industries, Incorporated, 201 Circle Drive North Piscataway, NJ 08854, USA
J. D. Cuchiaro
Affiliation:
Structured Materials Industries, Incorporated, 201 Circle Drive North Piscataway, NJ 08854, USA
L. G. Provost
Affiliation:
Structured Materials Industries, Incorporated, 201 Circle Drive North Piscataway, NJ 08854, USA
C. E. Rice
Affiliation:
Structured Materials Industries, Incorporated, 201 Circle Drive North Piscataway, NJ 08854, USA
S. Sun
Affiliation:
Structured Materials Industries, Incorporated, 201 Circle Drive North Piscataway, NJ 08854, USA
G. S. Tompa
Affiliation:
Structured Materials Industries, Incorporated, 201 Circle Drive North Piscataway, NJ 08854, USA
R. L. DeLeon
Affiliation:
AMBP Tech Corporation, 1576 Sweet Home Road Amherst, NY 14228, USA
T. S. Kalkur
Affiliation:
Dept. of Electrical and Computer Engineering, University of Colorado, Colorado Springs, CO 80918, USA
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Abstract

Excimer laser annealing studies were conducted of SrBi2Ta2O9, Pb(ZrxTi1-x)O3 and CeMnO3 thin films. The main incentive was to develop a low temperature process for SrBi2Ta2O9 thin films, which typically require a 750 C anneal to crystallize and achieve optimum ferroelectric properties. The results show that room temperature laser annealing can crystallize SrBi2Ta2O9, with a strong (200) preferred orientation. The Pb(ZrxTi1-x)O3 and CeMnO3 thin films investigated in this study were crystalline as deposited. Laser annealing of the Pb(ZrxTi1-x)O3 and CeMnO3 films did not result in a significant increase in crystallinity, as evidenced by the intensities of the x-ray diffraction peaks. Electrical characterization of laser annealed SrBi2Ta2O9 thin films showed good dielectric properties and the onset of ferroelectric behavior. Low temperature laser annealing is shown to be a viable approach to enable integration of ferroelectric SrBi2Ta2O9 films with silicon based micro-electronics, for ferroelectric memory applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C11.43
Copyright
Copyright © Materials Research Society 2004

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References

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