Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T07:50:02.098Z Has data issue: false hasContentIssue false

Laser Annealing of Ferroelectric SrBi2Ta2O9, Pb(ZrXTi1-X)O3 and CeMnO3 Thin Films

Published online by Cambridge University Press:  01 February 2011

N. M. Sbrockey
Affiliation:
Structured Materials Industries, Incorporated, 201 Circle Drive North Piscataway, NJ 08854, USA
J. D. Cuchiaro
Affiliation:
Structured Materials Industries, Incorporated, 201 Circle Drive North Piscataway, NJ 08854, USA
L. G. Provost
Affiliation:
Structured Materials Industries, Incorporated, 201 Circle Drive North Piscataway, NJ 08854, USA
C. E. Rice
Affiliation:
Structured Materials Industries, Incorporated, 201 Circle Drive North Piscataway, NJ 08854, USA
S. Sun
Affiliation:
Structured Materials Industries, Incorporated, 201 Circle Drive North Piscataway, NJ 08854, USA
G. S. Tompa
Affiliation:
Structured Materials Industries, Incorporated, 201 Circle Drive North Piscataway, NJ 08854, USA
R. L. DeLeon
Affiliation:
AMBP Tech Corporation, 1576 Sweet Home Road Amherst, NY 14228, USA
T. S. Kalkur
Affiliation:
Dept. of Electrical and Computer Engineering, University of Colorado, Colorado Springs, CO 80918, USA
Get access

Abstract

Excimer laser annealing studies were conducted of SrBi2Ta2O9, Pb(ZrxTi1-x)O3 and CeMnO3 thin films. The main incentive was to develop a low temperature process for SrBi2Ta2O9 thin films, which typically require a 750 C anneal to crystallize and achieve optimum ferroelectric properties. The results show that room temperature laser annealing can crystallize SrBi2Ta2O9, with a strong (200) preferred orientation. The Pb(ZrxTi1-x)O3 and CeMnO3 thin films investigated in this study were crystalline as deposited. Laser annealing of the Pb(ZrxTi1-x)O3 and CeMnO3 films did not result in a significant increase in crystallinity, as evidenced by the intensities of the x-ray diffraction peaks. Electrical characterization of laser annealed SrBi2Ta2O9 thin films showed good dielectric properties and the onset of ferroelectric behavior. Low temperature laser annealing is shown to be a viable approach to enable integration of ferroelectric SrBi2Ta2O9 films with silicon based micro-electronics, for ferroelectric memory applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jones, R.E. Jr, Maniar, P.D., Moazzami, R., Zurcher, P., Witowski, J.Z., Lii, Y.T., Chu, P. and Gillespie, S.J., “Ferroelectric non-volatile memories for low-voltage, low-power applications”, Thin Solid Films, Vol. 270(1), p. 584 (1995).Google Scholar
2. Singer, P., “FRAM: The New Contender”, Semiconductor International, p. 36 (2003).Google Scholar
3. Ramesh, R., Aggarwal, S. and Auciello, O., “Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories”, Materials Science and Engineering, Vol. 32(6), p. 191 (2001).Google Scholar
4. Araujo, C.A., Cuchiaro, J.D., McMillan, L.D., Scott, M.C. and Scott, J.F., “Fatigue-Free Ferroelectric Capacitors with Platinum Electrodes”, Nature, Vol. 374, April 13, 1995.Google Scholar
5. Nagel, N., Mikolajick, T., Kasko, I., Hartner, W., Moert, M., Pinnow, C., Dehm, C. and Mazure, C., “An Overview of FeRAM Technology for High Density Applications”, MRS Symposium Proceedings, Vol. 655, p CC1.1 (2001).Google Scholar