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laser ablation of carbon films used for transfer of electronic device

Published online by Cambridge University Press:  01 February 2011

Toshiyuki Sameshima  and
Nobuyuki Andoh
Toshiyuki Sameshima
Affiliation:
Tokyo University of Agriculture and Technology, 2–24–16 Nakacho, Koganei, Tokyo 184–8588, Japan
Nobuyuki Andoh
Affiliation:
Tokyo University of Agriculture and Technology, 2–24–16 Nakacho, Koganei, Tokyo 184–8588, Japan
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Abstract

Pulsed laser-induced ablation using diamond-like carbon (DLC) films is reported. Pulsed XeCl excimer laser induced heating revealed that 200-nm DLC films formed by sputtering method had high heat resistivity and structural relaxation was induced by laser heating. SiO2 layers formed on the DLC films were successively removed from the DLC surface by laser heating at 350 mJ/cm2. C-O bond reaction probably occurred and stickiness of SiO2 to carbon was reduced. Laser induced forward transfer of Al/SiO2 was also demonstrated using DLC films with laser heating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 849: Symposium KK – Kinetics-Driven Nanopatterning on Surfaces , 2004 , KK9.5
Copyright
Copyright © Materials Research Society 2005

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References

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