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Laser Ablation Deposited YBa2Cu3Ox, Thin Films on YSZ/Si(100)

Published online by Cambridge University Press:  01 January 1992

F. Sánchez
Affiliation:
Universitat de Barcelona, Departament de Fisica Aplicada i Electrònica, Avda. Diagonal 647, E-08028 Barcelona, Spain
M. Varela
Affiliation:
Universitat de Barcelona, Departament de Fisica Aplicada i Electrònica, Avda. Diagonal 647, E-08028 Barcelona, Spain
X. Queralt
Affiliation:
Universitat de Barcelona, Departament de Fisica Aplicada i Electrònica, Avda. Diagonal 647, E-08028 Barcelona, Spain
R. Aguiar
Affiliation:
Universitat de Barcelona, Departament de Fisica Aplicada i Electrònica, Avda. Diagonal 647, E-08028 Barcelona, Spain
J.L. Morenza
Affiliation:
Universitat de Barcelona, Departament de Fisica Aplicada i Electrònica, Avda. Diagonal 647, E-08028 Barcelona, Spain
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Abstract

Superconducting YBa2Cu3Ox (YBCO) thin films have been deposited on Si(100) substrates with yttria-stabilized zirconia (YSZ) buffer layers by laser ablation. Buffers have been obtained by laser ablation as well. The films have been characterized by scanning electron microscopy, x-ray diffractometry, secondary ion mass spectrometry, and four-contact electrical resistivity measurements. Secondary ion mass spectrometry results indicate very low interdiffusion between Si, YSZ and YBCO. The best YBCO films are textured with c axis perpendicular to the substrate and their resistance shows a normal state metallic behavior with zero resistance at temperatures higher than 80 K. The properties of YBCO films have been related with the substrate temperature and oxygen partial pressure during deposition.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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