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Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

Published online by Cambridge University Press:  28 February 2011

Hiroshi Iwata ,
Tomoyuki Nohda ,
Satoshi Ishida ,
Takashi Kuwahara ,
Keiichi Sano ,
Hiroyuki Kuriyama ,
Shigeru Noguchi ,
Hiroshi Hanafusa ,
Keiichi Kiyama  and
Shinya Tsuda
...Show all authors
Hiroshi Iwata
Affiliation:
SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Tomoyuki Nohda
Affiliation:
SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Satoshi Ishida
Affiliation:
SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Takashi Kuwahara
Affiliation:
SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Keiichi Sano
Affiliation:
SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Hiroyuki Kuriyama
Affiliation:
SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Shigeru Noguchi
Affiliation:
SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Hiroshi Hanafusa
Affiliation:
SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Keiichi Kiyama
Affiliation:
SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Shinya Tsuda
Affiliation:
SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Shoichi Nakano
Affiliation:
SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Yukinori Kuwano
Affiliation:
SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
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Abstract

The grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 709
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCE

1) Kakad, R. et al.: Material Research Society, Symposium Proceedings, 182 (1990) 115 Google Scholar
2) Morita, Y. et al: Jpn. J. Appl. Phys., 28 (1989) 309 Google Scholar
3) Winer, K. et al.: Appl. Phys. Lett., 57 (1990) 2222 Google Scholar
4) Sameshima, T. et al.: Jpn. J. Appl. Phys., 28 (1989) 2131 Google Scholar
5) Kuriyama, H. et al.: Jpn. J. Appl. Phys., 30 (1991) 3700 Google Scholar
6) Rimini, E.: in Cohesive Properties of Semiconductors under Laser Irradiation, Ed. Laude, L. D. (Nijhoff, The Hague, 1983) p. 71 Google Scholar
7) Nakamura, et al.: Jpn. J. Appl. Phys., 27 (1988) 2408 Google Scholar
8) Wada, Y. et al.: J. Electrochem. Soc, 125 (1978) 1499 Google Scholar
9) Sameshima, T. et al.: Jpn. J. Appl. Phys., 26 (1987) 1678 Google Scholar
10) Kamins, T. I.: J. Electrochem. Soc, 126 (1979) 833 Google Scholar
11) Irbin, J. C.: Bell Syst. Tech. J., 41 (1962) 387 Google Scholar