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Large-domain Organic Crystalline Films for Field-effect Transistors

Published online by Cambridge University Press:  01 February 2011

Y. Tominari ,
M. Uno ,
M. Yamagishi ,
Y. Suzuki ,
A. Wakamiya ,
S. Yamaguchi  and
J. Takeya
Y. Tominari
Affiliation:
[email protected], Osaka University, Toyonaka, 560-0043, Japan
M. Uno
Affiliation:
[email protected], Osaka University, Toyonaka, 560-0043, Japan
M. Yamagishi
Affiliation:
[email protected], Osaka University, Toyonaka, 560-0043, Japan
Y. Suzuki
Affiliation:
[email protected], Nagoya University, Nagoya, 464-8602, Japan
A. Wakamiya
Affiliation:
[email protected], Nagoya University, Nagoya, 464-8602, Japan
S. Yamaguchi
Affiliation:
[email protected], Nagoya University, Nagoya, 464-8602, Japan
J. Takeya
Affiliation:
[email protected], Osaka University, Graduate School of Science, 1-1, Machikaneyama, Toyonaka, 560-0043, Japan
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Abstract

We report a method to fabricate thin films of large-domain organic semiconductor single crystals dispersed over the whole surface of centimeter-scale substrates for field-effect transistors. Growing less than 500-nm thick film-like organic crystals of sub-millimeter sizes densely in a furnace independently of substrates by physical vapor transport, the collection of the single crystals is mechanically attached to the surface of gate dielectric layers. The organic transistors made of large-domain benzo-annulated pentathienoacene crystals exhibited pronounced transistor performances with mobility values of ∼ 0.2-2 cm2/Vs, which is as high as devices of one-piece crystals. The result demonstrates that the above technique provides a method to apply high performance of organic single crystal transistors to real circuitry devices on large-area substrates.

Keywords

organicdevicesgrain size
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1091: Symposium AA – Conjugated Organic Materials–Synthesis, Structure, Device and Applications , 2008 , 1091-AA05-73
Copyright
Copyright © Materials Research Society 2008

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