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Large-Area Deposition of GaAs by Mocvd

Published online by Cambridge University Press:  28 February 2011

James T. Daly  and
Carson B. Roberts
James T. Daly
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
Carson B. Roberts
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
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Abstract

A new, large-scale, barrel-type MOCVD reactor which is capable of pro- ducing seven 3-inch wafers or fourteen 2-inch wafers at a time has been developed. Experiments and computer modelling studies of this geometry have been performed. The physical and electronic properties of n-type GaAs as a function of growth conditions are presented. Through the use of experimental design methods, the growth process has been optimized to yield highly uniform growth rates. The demonstrated uniformity supports the use of this reactor for production environments requiring 3-inch wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 239
Copyright
Copyright © Materials Research Society 1989

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References

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