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Large In-Plane Lattice Expansion in NiAs-MnSb Thin Films Induced by ns Laser Recrystallization

Published online by Cambridge University Press:  15 February 2011

Yukiko Kubota ,
Grace L. Gorman  and
Ernesto E. Marinero
Yukiko Kubota
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120-6099 Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Grace L. Gorman
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120-6099
Ernesto E. Marinero
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120-6099
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Abstract

Sputter deposited MnSb thin films were annealed utilizing KrF excimer laser pulses (16ns), and the resulting structural and magnetic changes investigated. These changes are compared to those observed when the samples are subjected to isothermal and rapid thermal annealing treatments. Isothermal and rapid thermal annealing induce significant lateral grain growth, whereas the laser treatment produces vertical grain size refinement with no appreciable lateral growth. Annealing is shown to increase the hexagonal c-axis, reaching an expansion value of 7% for the laser annealed samples. This c-axis expansion has a strong influence on the magnetic properties of the thin films. Mechanisms for the c-axis expansion are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 384: Symposium L – Magnetic Ultrathin films, Multilayers and Surfaces , 1995 , 115
Copyright
Copyright © Materials Research Society 1995

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References

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