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Large Batch Etching of Gallium Nitride Using Inductively Coupled Plasma Tools as a Production Solution

Published online by Cambridge University Press:  31 January 2011

Zhong Ren ,
Mark Dineen ,
Ligang Deng ,
Andrew L. Goodyear  and
Robert Gunn
Zhong Ren
Affiliation:
[email protected], Oxford Instruments Plasma Technology, Bristol, United Kingdom
Mark Dineen
Affiliation:
[email protected], Oxford Instruments Plasma Technology, Bristol, United Kingdom
Ligang Deng
Affiliation:
[email protected], Oxford Instruments Plasma Technology, Bristol, United Kingdom
Andrew L. Goodyear
Affiliation:
[email protected], Oxford Instruments Plasma Technology, Bristol, United Kingdom
Robert Gunn
Affiliation:
[email protected], Oxford Instruments Plasma Technology, Bristol, United Kingdom
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Abstract

A highly effective technique for etching large batches of GaN wafers, by means of Inductively Coupled Plasma (ICP) tools, has been developed. A variety of 27 × 2 inch wafer batch processes have been investigated and etch rates in excess of 140nm/min with selectivity of 0.9:1 to photoresist (PR) has been achieved.

Particularly, a special active spacer was designed and employed in the ICP system to control plasma profile during the processes. This technique was favourable for increasing etch rates and achieving good uniformities. Using this system a wafer-to-wafer batch uniformity of ±4% was realized.

Keywords

III-Vnitrideoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B03-06
Copyright
Copyright © Materials Research Society 2010

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References

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