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Large Area Position Sensitive Detector Based on Amorphous Silicon Technology

Published online by Cambridge University Press:  01 January 1993

E. Fortunato ,
M. Vieira ,
L. Ferreira ,
C.N. Carvalho ,
G. Lavareda  and
R. Martins
E. Fortunato
Affiliation:
Dept. Science Materials, Faculty of Science and Technology, New University of Lisbon 2825 Monte de Caparica, Portugal
M. Vieira
Affiliation:
Dept. Science Materials, Faculty of Science and Technology, New University of Lisbon 2825 Monte de Caparica, Portugal
L. Ferreira
Affiliation:
EID, Optoelectronic Dept., Quinta dos Medronheiros, 2825 Monte de Caparica, Portugal
C.N. Carvalho
Affiliation:
Dept. Science Materials, Faculty of Science and Technology, New University of Lisbon 2825 Monte de Caparica, Portugal
G. Lavareda
Affiliation:
Dept. Science Materials, Faculty of Science and Technology, New University of Lisbon 2825 Monte de Caparica, Portugal
R. Martins
Affiliation:
Dept. Science Materials, Faculty of Science and Technology, New University of Lisbon 2825 Monte de Caparica, Portugal
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Abstract

We have developed a rectangular dual-axis large area Position Sensitive Detector (PSD), with 5 cm × 5 cm detection area, based on PIN hydrogenated amorphous silicon (a-Si:H) technology, produced by Plasma Enhanced Chemical Vapor Deposition (PECVD). The metal contacts are located in the four edges of the detected area, two of them located on the back side of the ITO/PIN/A1 structure and the others two located in the front side. The key factors of the detectors resolution and linearity are the thickness uniformity of the different layers, the geometry and the contacts location. Besides that, edge effects on the sensor's corner disturb the linearity of the detector. In this paper we present results concerning the linearity of the detector as well as its optoelectronic characteristics and the role of the i-layer thickness on the final sensor performances.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 981
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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