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Large Area 6H- and 4H-SiC Photoconductive Switches

Published online by Cambridge University Press:  01 February 2011

S. Doğan ,
F. Yun ,
C.B. Roberts ,
J. Parish ,
D. Huang ,
R. E. Myers ,
M. Smith ,
S. E Saddow ,
B. Ganguly  and
H. Morkoç
S. Doğan
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, 601 W. Main Street, Richmond, VA 23284, USA. Atatürk University, Faculty of Art & Science, Department of Physics, 25240 Erzurum, Turkey.
F. Yun
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, 601 W. Main Street, Richmond, VA 23284, USA.
C.B. Roberts
Affiliation:
Tech Explore, LLC, 5273 College Corner Pike #12, Oxford, OH 45056-1055, USA.
J. Parish
Affiliation:
Air Force Research Laboratory, Wright-Patterson AFB, OH 45433-7919, USA.
D. Huang
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, 601 W. Main Street, Richmond, VA 23284, USA.
R. E. Myers
Affiliation:
Electrical Engineering Dept., University of South Florida, Tampa, FL 33543, USA.
M. Smith
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, 601 W. Main Street, Richmond, VA 23284, USA.
S. E Saddow
Affiliation:
Electrical Engineering Dept., University of South Florida, Tampa, FL 33543, USA.
B. Ganguly
Affiliation:
Air Force Research Laboratory, Wright-Patterson AFB, OH 45433-7919, USA.
H. Morkoç
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, 601 W. Main Street, Richmond, VA 23284, USA.
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Abstract

Photoconductive Semiconductor Switches (PCSS) were fabricated in planar structures on high resistivity 4H-SiC and conductive 6H-SiC and tested at DC Bias voltages up to 1000 V. The gap spacing between the electrodes is 1 mm. The average on-state resistance and the ratio of on-state to off-state currents were about 20 Ω and 3×1011 for 4H-SiC, and 60 Ω and 6.6×103 for 6H-SiC, respectively. The typical maximum switch current at 1000 V is about 49 A for 4H-SiC. Photoconductivity pulse widths for all applied voltages were 8-10 ns. The observed performance is due in part to the removal of the surface damage by high temperature H2 etching and surface preparation. Atomic Force Microscopy (AFM) images revealed that very good surface morphology, atomic layer flatness and large step widths were achieved with this surface treatment and these atomically smooth surfaces likely contributed to the excellent switching performance of these devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C7.2
Copyright
Copyright © Materials Research Society 2003

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References

1. Nakashima, S., Matsunami, H., Yoshida, S. and Harima, H., Silicon Carbide and Related Materials, 1995, Institute of Physics Conference Series No. 142, IOP publishing, Bristol, 1996.Google Scholar
2. Morkoç, H., Strite, S., Gao, G. B., Lin, M.E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363, 1994.Google Scholar
3. Cooper, J. A., Melloch, M.R., Woodall, J.M., Spitz, J., Schoen, K. J., and Henning, J., Mater. Sci. Forum, 264-268, 895, 1998,Google Scholar
4. Park, Y. S., SiC Materials and Devices, Semiconductors and Semimetals, 52, Academic Press, San Diego, 1998.Google Scholar
5. Edmond, J., Kong, H., Suvorov, A., Waltz, D., and Carter, C., Phys. Stat. Sol. (a) 162, 481, 1997.Google Scholar
6. Properties of Advanced Semiconductor Materials, edited by Levinshtein, M. E., Rumyantsev, S. L. and Shur, M. S. (John Wiley & Sons Inc, New York), 2001.Google Scholar
7. Neudeck, P. G., Institute of Physics Conference Series 141, (San Diego, CA), p. 1–6, 1994 Google Scholar
8. High Power Optically activated Solid-State Switches, edited by Rosen, A. and Zutavern, F. (Artech House, Boston), 1994.Google Scholar
9. Islam, N. E., Schumiloglu, E. and Fleddermann, C. B., Appl. Phys. Lett, 73(14), 1988, 1998.Google Scholar
10. Cho, P. S., Goldhar, J., Lee, Chi H., Saddow, S. E. and Neudeck, P., J. Appl. Phys. 77(4), 1591, 1995.Google Scholar
11. Saddow, S. E., Cho, P. S., Goldhar, J., McLean, F. Barry, Palmour, J. W. and Lee, C. H., Inst. Phys. Conf. Ser. No. 137: Chapter 6, (Springer-Verlag), p. 573, 1994.Google Scholar
12. Sheng, S., Spencer, M. G., Tang, X., Zhou, P., Wongchotigul, K., Taylor, C. and Harris, G. L., Mater. Sci. and Eng. B, 46, 147, 1997.Google Scholar
13. Yoneda, H., Ueda, K., Aikawa, Y., Baba, K., Shohata, N., Appl. Phys. Lett., 66(4), 460, 1995.Google Scholar
14. Elezzabi, Y., Houtman, H. and Meyer, J., IEEE Trans on Plasma Science, 22, 1043, 1994.Google Scholar
15. Sudarshan, T. S., Gradinaru, G., Korony, G., Mitchel, W. and Hopkins, R. H., Appl. Phys. Lett, 67(23), 3435, 1995.Google Scholar
16. Onojima, N., Suda, J., and Matsunami, H., Appl. Phys. Lett, 80(1), 76, 2001.Google Scholar
17. Dogan, S., Teke, A., Huang, D., and Morkoç, H., Roberts, C. B., Parish, J., Ganguly, B., Smith, M., Myers, R. E., and Saddow, S. E., Appl. Phys. Lett., in press, 2003.Google Scholar