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Large and Stable Field-Emission Current from Heavily Si-Doped AlN Grown by MOVPE

Published online by Cambridge University Press:  14 March 2011

Makoto Kasu  and
Naoki Kobayashi
Makoto Kasu
Affiliation:
NTT Basic Research Laboratories 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Japan
Naoki Kobayashi
Affiliation:
NTT Basic Research Laboratories 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Japan
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Abstract

We investigated electron field emission (FE) from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy. We found that, as the Si-dopant density increases, the threshold electric field decreases, which indicates that electrons are supplied to the surface effectively as a result of Si doping. We show that heavily Si-doped AlN has a maximum FE current of 347 μA (the maximum current density of 11 mA/cm2), stable FE current (fluctuation: 3%), and a threshold electric field of 34 V/μm. We observed visible light emission (luminance: about 1200 cd/m2) from phosphors excited by the field-emitted electrons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , R5.12.1
Copyright
Copyright © Materials Research Society 2000

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References

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