Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-17T15:14:13.922Z Has data issue: false hasContentIssue false
  • English
  • Français

KrF Laser-Induced Nanometer Si Crystallites Formation and Tem Observation

Published online by Cambridge University Press:  15 February 2011

Xinfan Huang ,
Zhifeng Li ,
Wei Wu ,
Xiaoyuan Chen ,
Wei Li ,
Ling Hong ,
Qi Li  and
Kunji Chen
Xinfan Huang
Affiliation:
Dept. of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Zhifeng Li
Affiliation:
Dept. of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA National Laboratory for Superlattices and Microstructures, Beijing 100083, CHINA
Wei Wu
Affiliation:
Dept. of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Xiaoyuan Chen
Affiliation:
Dept. of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Wei Li
Affiliation:
Dept. of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Ling Hong
Affiliation:
Dept. of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Qi Li
Affiliation:
Dept. of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Kunji Chen
Affiliation:
Dept. of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA National Laboratory for Superlattices and Microstructures, Beijing 100083, CHINA
Get access

Abstract

We report the preparation of the nanometer Si crystallites constrained between a-SiNx:H barrier layers by means of KrF excimer laser induced crystallization. X-ray diffraction (XRD) and Raman scattering spectra demonstrate that ultra thin a-Si:H well layers have been crystallized. The average grain size of Si crystallites is on the order of magnitude of a nanometer. Small-angle XRD spectrum indicates multilayer structures have not undergone laser damage. The results of TEM are presented to show smooth and abrupt interfaces of layered structures and nanometer Si crystallites arrayed one-by-one in the Si layer. The thermodynamics of KrF laser-induced crystallization of ultra-thin Si layer has been discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 375
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

1 Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2 Ruckchloss, M., Ambacher, O. and Veprek, S., Appl. Phys. Lett. 63, 1474 (1993).Google Scholar
3 Takagi, H., Ogawa, H., Yamazaki, Y., Ishizaki, A. and Nakagiri, T., Appl. Phys. Lett 56, 2379 (1990).Google Scholar
4 Furukawa, K., Fujino, M. and Matsumoto, N., Appl. Phys. Lett. 60, 2744 (1992).Google Scholar
5 Chen, K.J., Huang, X.F., Xu, J. and Feng, D., Appl. Phys. Lett., 61, 2069 (1992).Google Scholar
6 Jiang, J., Chen, K., Huang, X., LI, Z. and Feng, D., Solid. State Communications, 92, 227 (1994).Google Scholar
7 Sameshima, T., MRS Symp. Proc. 283, 679 (1993).Google Scholar
8 Tanaka, K., Honma, I., Tamaoki, H. and Komiyama, H., MRS Symp. Proc. 118, 343 (1988).Google Scholar